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| 型号： | SI3590DV |
| 厂商： | Vishay Intertechnology,Inc. |
| 元件分类： | MOSFETs |
| 英文描述： | N- and P-Channel 30-V (D-S) MOSFET |
| 中文描述： | N和P沟道30V的（D-S）MOSFET |
| 文件页数： | 4/8页 |
| 文件大小： | 64K |
| 代理商： | SI3590DV |
Si3590DV
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72032
S-21979
—
Rev. A, 04-Nov-02
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
NCHANNEL
0.00
0.05
0.10
0.15
0.20
0.25
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
-
r
)
I
D
= 3 A
1.2
1.5
0.1
1
10
0.00
0.3
0.6
0.9
T
J
= 25 C
T
J
= 150 C
Source-Drain Diode Forward Voltage
V
SD
- Source-to-Drain Voltage (V)
-
I
S
0.01
0
1
6
8
2
4
10
30
0.1
P
Single Pulse Power, Junction-to-Ambient
Time (sec)
-0.6
-0.4
-0.2
-0.0
0.2
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 250 A
Threshold Voltage
V
V
G
T
J
- Temperature ( C)
Safe Operating Area, Junction-to-Case
V
DS
- Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
1 ms
-
I
D
0.1
T
= 25 C
Single Pulse
10 ms
100 ms
dc
100 s
I
DM
Limited
I
Limited
r
DS(on)
Limited
BV
DSS
Limited
10 s, 1 s
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI3590DV_06 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET |
| SI3590DV_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET |
| SI3590DV_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET |
| SI3590DV-T1 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R |
| SI3590DV-T1-E3 | 功能描述:MOSFET N&P-CH 30V (D-S) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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