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参数资料
| 型号： | SI4346DY |
| 厂商： | Vishay Intertechnology,Inc. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 双N沟道30 V的（副）MOSFET的肖特基二极管 |
| 文件页数： | 3/6页 |
| 文件大小： | 86K |
| 代理商： | SI4346DY |
Si4346DY
Vishay Siliconix
New Product
Document Number: 72958
S-41793—Rev. B, 04-Oct-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0.0
0.3
0.6
0.9
1.2
1.5
0
200
400
600
800
1000
1200
0
5
10
15
20
25
30
r
D
)
0.6
0.8
1.0
1.2
1.4
1.6
50
25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
9
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0
5
10
15
20
25
30
V
DS
Drain-to-Source Voltage (V)
C
rss
V
DS
= 15 V
I
D
= 8 A
I
D
Drain Current (A)
V
GS
= 10 V
I
D
Gate Charge
On-Resistance vs. Drain Current
Q
g
Total Gate Charge (nC)
C
V
G
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature ( C)
0.00
0.01
0.02
0.03
0.04
0.05
0
2
4
6
8
10
T
J
= 25 C
I
D
= 8 A
40
10
0.1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
r
D
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
I
S
V
GS
= 4.5 V
T
J
= 150 C
V
GS
= 10 V
C
oss
C
iss
1
r
D
(
相关PDF资料 |
PDF描述 |
|---|---|
| SI4346DY-T1-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4346DY-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| Si4362DY-T1 | Paired Cable; Number of Conductors:6; Conductor Size AWG:22; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:3; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes |
| Si4362DY-T1E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4362DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI4346DY-E3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4346DY-T1-E3 | 功能描述:MOSFET 30V 8.0A 2.5W 23mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4346DY-T1-E3 | 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET 30V 8A SOIC |
| SI4346DY-T1-GE3 | 功能描述:MOSFET 30V 8.0A 2.5W 23mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4348DY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
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