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参数资料
| 型号： | SI4362DY |
| 厂商： | Vishay Intertechnology,Inc. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 双N沟道30 V的（副）MOSFET的肖特基二极管 |
| 文件页数： | 1/4页 |
| 文件大小： | 51K |
| 代理商： | SI4362DY |
FEATURES
TrenchFET Power MOSFET
Optimized for “Low Side” Synchronous
Rectifier Operation
100% R
g
Tested
APPLICATIONS
DC/DC Converters
Synchronous Rectifiers
Si4362DY
Vishay Siliconix
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.0045 @ V
GS
= 10 V
0.0055 @ V
GS
= 4.5 V
20
19
SO-8
S
D
S
D
S
D
G
D
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
Ordering Information:
Si4362DY
Si4362DY-T1 (with Tape and Reel)
Si4362DY—E3 (Lead Free)
Si4362DY-T1—E3 (Lead Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
a
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
20
T
A
= 70 C
15
A
Pulsed Drain Current (10 s Pulse Width)
I
DM
60
Continuous Source Current (Diode Conduction)
a
I
S
2.9
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.5
W
T
A
= 70 C
2.2
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
THERMAL RESISTANCE RATINGS
a
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
R
thJA
29
35
C/W
Maximum Junction-to-Foot (Drain)
R
thJF
13
16
Notes
a.
Surface Mounted on 1” x 1” FR4 Board, t
10 sec
相关PDF资料 |
PDF描述 |
|---|---|
| Si4362DY-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| Si4368DY-E3 | N-Channel Reduced Qg, Fast Switching WFET |
| Si4368DY-T1-E3 | N-Channel Reduced Qg, Fast Switching WFET |
| SI4368DY | N-Channel Reduced Qg, Fast Switching WFET |
| SI4370DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI4362DY-E3 | 功能描述:MOSFET 30V 20A 3.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4362DY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 30V 20A 8-Pin SOIC N T/R |
| SI4362DY-T1E3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4362DY-T1-E3 | 功能描述:MOSFET 30 Volt 20 Amp 3.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4364DY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
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