- 您现在的位置：买卖IC网 > PDF目录368615 > SI4362DY (Vishay Intertechnology,Inc.) Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PDF资料下载
参数资料
| 型号： | SI4362DY |
| 厂商： | Vishay Intertechnology,Inc. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 双N沟道30 V的（副）MOSFET的肖特基二极管 |
| 文件页数： | 2/4页 |
| 文件大小： | 51K |
| 代理商： | SI4362DY |
Si4362DY
Vishay Siliconix
www.vishay.com
2
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.6
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
A
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 C
5 V, V
GS
= 10
V
5
On-State Drain Current
a
I
D(on)
V
DS
30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10
V, I
D
= 20 A
0.0035
0.0045
V
GS
= 4.5 V, I
D
= 19 A
0.0042
0.0055
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
90
S
Diode Forward Voltage
a
V
SD
I
S
= 2.9 A, V
GS
= 0 V
0.75
1.1
V
Dynamic
b
Total Gate Charge
Q
g
42
55
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 4.5 V, I
D
= 20 A
12.8
nC
Gate-Drain Charge
Q
gd
7.7
Gate Resistance
R
G
0.5
1.3
2.2
Turn-On Delay Time
t
d(on)
17
30
Rise Time
t
r
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
g
= 6
14
25
Turn-Off Delay Time
t
d(off)
I
D
158
230
ns
Fall Time
t
f
43
65
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ s
50
80
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
50
60
0
2
4
6
8
10
V
GS
= 10 thru 3 V
25 C
T
C
= 125 C
55 C
2 V
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
相关PDF资料 |
PDF描述 |
|---|---|
| Si4362DY-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| Si4368DY-E3 | N-Channel Reduced Qg, Fast Switching WFET |
| Si4368DY-T1-E3 | N-Channel Reduced Qg, Fast Switching WFET |
| SI4368DY | N-Channel Reduced Qg, Fast Switching WFET |
| SI4370DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI4362DY-E3 | 功能描述:MOSFET 30V 20A 3.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4362DY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 30V 20A 8-Pin SOIC N T/R |
| SI4362DY-T1E3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4362DY-T1-E3 | 功能描述:MOSFET 30 Volt 20 Amp 3.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4364DY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
发布紧急采购，3分钟左右您将得到回复。