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参数资料
| 型号： | SI4368DY |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Reduced Qg, Fast Switching WFET |
| 中文描述： | N沟道减少Qg和快速切换WFET |
| 文件页数： | 1/5页 |
| 文件大小： | 70K |
| 代理商： | SI4368DY |
FEATURES
Extremely Low Q
gd
WFET Technology for
Switching Losses Improvement
TrenchFET Gen II Power MOSFET
100% R
g
Tested
APPLICATIONS
Low-Side DC/DC Conversion
Notebook, Server, VRM Module
Fixed Telecom
Si4368DY
Vishay Siliconix
New Product
Document Number: 72704
S-40105—Rev. A, 02-Feb-04
www.vishay.com
1
N-Channel Reduced Q
g
, Fast Switching WFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.0032 @ V
GS
= 10 V
0.0036 @ V
GS
= 4.5 V
25
22
SO-8
S
D
S
D
S
D
G
D
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
Ordering Information:
Si4368DY—E3
Si4368DY-T1—E3 (Lead Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
25
17
T
A
= 70 C
20
13
Pulsed Drain Current (10 s Pulse Width)
I
DM
70
A
Continuous Source Current (Diode Conduction)
a
I
S
2.9
1.3
Avalanch Current
L= 0.1 mH
i
AS
50
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.5
1.6
W
T
A
= 70 C
2.2
1
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
29
35
Steady State
67
80
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
13
16
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相关PDF资料 |
PDF描述 |
|---|---|
| SI4370DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4378DY | N-Channel 20-V (D-S) MOSFET |
| Si4378DY-E3 | N-Channel 20-V (D-S) MOSFET |
| Si4378DY-T1-E3 | N-Channel 20-V (D-S) MOSFET |
| SI4392DY-E3 | N-Channel Reduced Qg, Fast Switching WFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI4368DY-E3 | 功能描述:MOSFET 30V 25A 3.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4368DY-T1-E3 | 功能描述:MOSFET 30 Volt 25 Amp 3.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4368DY-T1-GE3 | 功能描述:MOSFET 30V 25A 3.5W 3.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4370DY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4376DY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
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