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参数资料
| 型号： | Si4368DY-T1-E3 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Reduced Qg, Fast Switching WFET |
| 中文描述： | N沟道减少Qg和快速切换WFET |
| 文件页数： | 2/5页 |
| 文件大小： | 70K |
| 代理商： | SI4368DY-T1-E3 |
Si4368DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72704
S-40105—Rev. A, 02-Feb-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.6
1.8
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
A
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 C
5 V, V
GS
= 10
V
5
On-State Drain Current
a
I
D(on)
V
DS
30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10
V, I
D
= 25 A
0.0026
0.0032
V
GS
= 4.5 V, I
D
= 22 A
0.0029
0.0036
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 25 A
150
S
Diode Forward Voltage
a
V
SD
I
S
= 2.9 A, V
GS
= 0 V
0.66
1.1
V
Dynamic
b
Input Capacitance
C
iss
8340
Output Capacitance
C
oss
V
DS
= 15 V,
V
GS
= 0 V, f = 1 MHz
850
pF
Reverse Transfer Capacitance
C
rss
355
Total Gate Charge
Q
g
53
80
Gate-Source Charge
Q
gs
V
= 15 V, V
GS =
4.5 V, I
= 20 A
DS
17.5
nC
Gate-Drain Charge
Q
gd
D
6.5
Gate Resistance
R
g
f = 1 MHz
0.8
1.2
1.8
Turn-On Delay Time
t
d(on)
25
38
Rise Time
t
r
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
g
= 6
20
30
Turn-Off Delay Time
t
d(off)
I
D
172
260
ns
Fall Time
t
f
41
62
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ s
42
60
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
10
20
30
40
50
60
0
10
20
30
40
50
60
0
1
2
3
4
5
V
GS
= 10 thru 3 V
25 C
T
C
= 125 C
55 C
2 V
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
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PDF描述 |
|---|---|
| SI4368DY | N-Channel Reduced Qg, Fast Switching WFET |
| SI4370DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4378DY | N-Channel 20-V (D-S) MOSFET |
| Si4378DY-E3 | N-Channel 20-V (D-S) MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI4368DY-T1-GE3 | 功能描述:MOSFET 30V 25A 3.5W 3.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4370DY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4376DY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4376DY-T1 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4378DY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET |
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