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参数资料
| 型号： | SI4405DY-T1 |
| 厂商： | Vishay Intertechnology,Inc. |
| 元件分类： | MOSFETs |
| 英文描述： | P-Channel 30-V (D-S) MOSFET |
| 中文描述： | P沟道30V的MOSFET |
| 文件页数： | 1/5页 |
| 文件大小： | 43K |
| 代理商： | SI4405DY-T1 |
FEATURES
TrenchFET Power MOSFETS
100% R
g
Tested
APPLICATIONS
Battery and Load Switching
- Notebook Computers
- Notebook Battery Packs
Si4405DY
Vishay Siliconix
Document Number: 71913
S-31726—Rev. D, 18-Aug-03
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
-30
0.0075 @ V
GS
= -10 V
-17
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
S
G
D
P-Channel MOSFET
Ordering Information:
Si4405DY
Si4405DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-17
-11
T
A
= 70 C
-13
-9
A
Pulsed Drain Current
I
DM
-60
continuous Source Current (Diode Conduction)
a
I
S
-2.9
-1.30
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.5
1.6
W
T
A
= 70 C
2.1
1.0
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
29
35
Steady State
67
80
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
13
16
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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| SI4411DY | P-Channel 30-V (D-S) MOSFE |
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| Si4418DY-E3 | N-Channel 200-V (D-S) MOSFET |
| Si4418DY-T1-E3 | N-Channel 200-V (D-S) MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI4405DY-T1-E3 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET P-CH 30V 11A 8-Pin SOIC N T/R 制造商:Vishay Intertechnologies 功能描述:1100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| SI4406DY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4406DY-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET Transistor Transistor Polarity:NP |
| SI4406DY-T1 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4406DY-T1-E3 | 功能描述:MOSFET 30V 20A 3.5W 4.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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