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参数资料
| 型号： | SI4405DY-T1 |
| 厂商： | Vishay Intertechnology,Inc. |
| 元件分类： | MOSFETs |
| 英文描述： | P-Channel 30-V (D-S) MOSFET |
| 中文描述： | P沟道30V的MOSFET |
| 文件页数： | 2/5页 |
| 文件大小： | 43K |
| 代理商： | SI4405DY-T1 |
Si4405DY
Vishay Siliconix
www.vishay.com
2
Document Number: 71913
S-31726—Rev. D, 18-Aug-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-1.0
-3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -24 V, V
GS
= 0 V
-1
A
V
DS
= -24 V, V
GS
= 0 V, T
J
= 70 C
-10
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= -10 V
-30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -10 V, I
D
= -17 A
0.006
0.0075
Forward Transconductance
a
g
fs
V
DS
= -15
V, I
D
= -17 A
47
S
Diode Forward Voltage
a
V
SD
I
S
= -2.9 A, V
GS
= 0 V
-0.75
-1.1
V
Dynamic
b
Total Gate Charge
Q
g
105
160
Gate-Source Charge
Q
gs
V
DS
= -15 V,
V
GS
= -10 V, I
D
= -17 A
17.5
nC
Gate-Drain Charge
Q
gd
29.5
Gate Resistance
R
g
t
d(on)
3
4
6.5
Turn-On Delay Time
25
40
Rise Time
t
r
V
= -15 V, R
= 15
-1 A, V
GEN
= -10 V, R
G
= 6
15
25
Turn-Off Delay Time
t
d(off)
I
D
190
285
ns
Fall Time
t
f
80
120
Source-Drain Reverse Recovery Time
t
rr
I
F
= -2.9 A, di/dt = 100 A/ s
70
110
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
10
20
30
40
50
60
0
1
2
3
4
5
V
GS
= 10 thru 5 V
T
C
= 125 C
-55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
4 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI4405DY-T1-E3 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET P-CH 30V 11A 8-Pin SOIC N T/R 制造商:Vishay Intertechnologies 功能描述:1100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| SI4406DY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4406DY-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET Transistor Transistor Polarity:NP |
| SI4406DY-T1 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4406DY-T1-E3 | 功能描述:MOSFET 30V 20A 3.5W 4.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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