- 您现在的位置：买卖IC网 > PDF目录372145 > SI4416DY (FAIRCHILD SEMICONDUCTOR CORP) Single N-Channel MOSFET PDF资料下载
参数资料
| 型号： | SI4416DY |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Single N-Channel MOSFET |
| 中文描述： | 9000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SOIC-8 |
| 文件页数： | 5/13页 |
| 文件大小： | 253K |
| 代理商： | SI4416DY |
Philips Semiconductors
Si4416DY
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 05 June 2001
5 of 13
9397 750 08299
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
Static characteristics
V
GS(th)
gate-source threshold voltage
I
DSS
drain-source leakage current
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
DS
= V
GS
;
Figure 9
V
DS
= 24 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 55
°
C
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 9 A;
Figure 7
and
8
V
GS
= 4.5 V; I
D
= 7.3 A;
Figure 7
and
8
1
V
14
21
1
25
100
18
28
μ
A
μ
A
nA
m
m
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
g
fs
forward transconductance
Q
g(tot)
total gate charge
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
t
d(on)
turn-on delay time
t
r
turn-on rise time
t
d(off)
turn-off delay time
t
f
turn-off fall time
Source-drain (reverse) diode
V
SD
source-drain (diode forward) voltage I
S
= 2.3 A; V
GS
= 0 V;
Figure 13
t
rr
reverse recovery time
V
DS
= 15 V; I
D
= 9 A;
Figure 11
I
D
= 9 A; V
DD
= 15 V; V
GS
= 5 V;
Figure 14
I
D
= 9 A; V
DD
= 15 V; V
GS
= 10 V;
Figure 14
22
18
30
6
6
8
10
40
30
25
40
20
20
60
45
S
nC
nC
nC
nC
ns
ns
ns
ns
V
DD
= 15 V; R
D
= 15
; V
GS
= 10 V; R
G
= 6
0.75
50
1.2
80
V
ns
I
S
= 2.3 A; dI
S
/dt =
100 A/
μ
s; V
GS
= 0 V
相关PDF资料 |
PDF描述 |
|---|---|
| SI4800 | N-channel enhancement mode field-effect transistor |
| SI4884 | TrenchMOS⑩ logic level FET |
| Si4884DY | N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages |
| SI4884DY | Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| SI5311-H | IRED |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI4416DY_RC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:R-C Thermal Model Parameters |
| SI4416DY-E3 | 功能描述:MOSFET 30V 9A 2.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4416DY-T1 | 功能描述:MOSFET 30V 9A 2.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4416DY-T1-E3 | 功能描述:MOSFET 30V 9A 2.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4418DY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) MOSFET |
发布紧急采购，3分钟左右您将得到回复。