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参数资料
| 型号： | Si4418DY-E3 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 200-V (D-S) MOSFET |
| 中文描述： | N沟道200 -五（副）MOSFET的 |
| 文件页数： | 2/5页 |
| 文件大小： | 69K |
| 代理商： | SI4418DY-E3 |
Si4418DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72513
S-32412—Rev. B, 24-Nov-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2
4
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 200 V, V
GS
= 0 V
1
A
V
DS
= 200 V, V
GS
= 0 V, T
J
= 85 C
20
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10
V
12
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10
V, I
D
= 3 A
0.110
0.130
V
GS
= 6.0 V, I
D
= 2.8 A
0.120
0.142
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 3 A
13
S
Diode Forward Voltage
a
V
SD
I
S
= 2.1 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
20
30
Gate-Source Charge
Q
gs
V
DS
= 100 V,
V
GS
= 10 V, I
D
= 3 A
4.5
nC
Gate-Drain Charge
Q
gd
6.5
Gate Resistance
R
g
f = 1 MHz
1
2
3.4
Turn-On Delay Time
t
d(on)
15
25
Rise Time
t
r
V
= 100 V, R
= 100
1 A, V
GEN
= 10 V, R
G
= 6
15
25
Turn-Off Delay Time
t
d(off)
I
D
40
60
ns
Fall Time
t
f
20
30
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.1 A, di/dt = 100 A/ s
70
110
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
2
4
6
8
10
12
0
1
2
3
4
5
6
0
2
4
6
8
10
12
0
1
2
3
4
5
V
GS
= 10 thru 6 V
T
C
= 125 C
55 C
4 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
5 V
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相关代理商/技术参数 |
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|---|---|
| SI4418DY-T1-E3 | 功能描述:MOSFET 200V 3.0A 1.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4418DY-T1-GE3 | 功能描述:MOSFET 200V 3.0A 2.5W 130mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4420BDY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4420BDY_06 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4420BDY-T1-E3 | 功能描述:MOSFET 30V 13.5A 0.0085Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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