- 您现在的位置：买卖IC网 > PDF目录365548 > SI4473BDY (Vishay Intertechnology,Inc.) P-Channel 14-V (D-S) MOSFET PDF资料下载
参数资料
| 型号： | SI4473BDY |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 14-V (D-S) MOSFET |
| 中文描述： | P通道14 - V（下局副局长）MOSFET的 |
| 文件页数： | 1/4页 |
| 文件大小： | 56K |
| 代理商： | SI4473BDY |
FEATURES
TrenchFET Power MOSFET
APPLICATION
Battery Switch for Portable Equipment
Si4473DY
Vishay Siliconix
Document Number: 71613
S-50154—Rev. C, 31-Jan-05
www.vishay.com
1
P-Channel 14-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
14
0.011 @ V
GS
=
4.5 V
13
0.016 @ V
GS
=
2.5 V
11
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information:
Si4473DY
Si4473DY-T1 (with Tape and Reel)
Si4473DY—E3 (Lead (Pb)-Free)
Si4473DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
14
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
13
9
T
A
= 70 C
10
7
A
Pulsed Drain Current
I
DM
50
continuous Source Current (Diode Conduction)
a
I
S
2.7
1.36
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.0
1.5
W
T
A
= 70 C
1.9
0.95
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
33
42
Steady State
70
84
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
16
21
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相关PDF资料 |
PDF描述 |
|---|---|
| SI4473BDY-T1-E3 | P-Channel 14-V (D-S) MOSFET |
| SI4473BDY-E3 | P-Channel 14-V (D-S) MOSFET |
| SI4482DY | 30V N-Channel PowerTrench MOSFET |
| SI4482DY-T1 | 30V N-Channel PowerTrench MOSFET |
| Si4483EDY-T1-E3 | P-Channel 30-V (D-S) MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI4473BDY-E3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 14-V (D-S) MOSFET |
| SI4473BDY-T1-E3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 14-V (D-S) MOSFET |
| SI4473DY | 功能描述:MOSFET 14V 13A 3W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4473DY-E3 | 功能描述:MOSFET 14V 13A 3W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4473DY-T1 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 14-V (D-S) MOSFET |
发布紧急采购，3分钟左右您将得到回复。