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参数资料
| 型号： | SI4473BDY |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 14-V (D-S) MOSFET |
| 中文描述： | P通道14 - V（下局副局长）MOSFET的 |
| 文件页数： | 2/4页 |
| 文件大小： | 56K |
| 代理商： | SI4473BDY |
Si4473DY
Vishay Siliconix
www.vishay.com
2
Document Number: 71613
S-50154—Rev. C, 31-Jan-05
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250 A
0.6
1.5
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
14 V, V
GS
= 0 V
1
A
V
DS
=
14 V, V
GS
= 0 V, T
J
= 70 C
10
On-State Drain Current
a
I
D(on)
V
DS
=
5 V, V
GS
=
4.5 V
30
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
4.5 V, I
D
=
13 A
0.0088
0.011
V
GS
=
2.5 V, I
D
=
11 A
0.013
0.016
Forward Transconductance
a
g
fs
V
DS
=
17
V, I
D
=
13 A
50
S
Diode Forward Voltage
a
V
SD
I
S
=
2.7 A, V
GS
= 0 V
0.65
1.1
V
Dynamic
b
Total Gate Charge
Q
g
46
70
Gate-Source Charge
Q
gs
V
DS
=
10 V,
V
GS
=
4.5 V, I
D
=
13 A
9
nC
Gate-Drain Charge
Q
gd
R
g
t
d(on)
13.2
Gate Resistance
1.5
3.2
5.3
Turn-On Delay Time
35
55
Rise Time
t
r
V
= 15 V, R
= 10
1 A, V
GEN
=
4.5 V, R
g
= 6
45
70
Turn-Off Delay Time
t
d(off)
I
D
160
240
ns
Fall Time
t
f
140
210
Source-Drain Reverse Recovery Time
t
rr
I
F
=
2.1 A, di/dt = 100 A/ s
55
80
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
50
0
2
4
6
8
10
V
GS
= 5 thru 2.5 V
T
C
=
55 C
125 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
2 V
1.5 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI4473BDY-E3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 14-V (D-S) MOSFET |
| SI4473BDY-T1-E3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 14-V (D-S) MOSFET |
| SI4473DY | 功能描述:MOSFET 14V 13A 3W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4473DY-E3 | 功能描述:MOSFET 14V 13A 3W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4473DY-T1 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 14-V (D-S) MOSFET |
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