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| 型号： | SI4914BDY-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 3/15页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 8-SOIC |
| 标准包装： | 2,500 |
| 系列： | LITTLE FOOT® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.4A，8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 21 毫欧 @ 8A，10V |
| Id 时的 Vgs(th)（最大）： | 2.7V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10.5nC @ 4.5V |
| 功率 - 最大： | 2.7W，3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
Si4914BDY
Vishay Siliconix
MOSFET SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Dynamic a
Turn-On Delay Time
Rise Time
t d(on)
t r
Channel-1
V DD = 15 V, R L = 3 Ω
I D ? 5 A, V GEN = 10 V, R g = 1 Ω
Ch-1
Ch-2
Ch-1
Ch-2
9
10
10
9
18
20
20
18
Turn-Off Delay Time
t d(off)
Channel-2
V DD = 15 V, R L = 3 Ω
Ch-1
Ch-2
16
16
32
32
ns
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
t f
t rr
Q rr
t a
t b
I D ? 5 A, V GEN = 10 V, R g = 1 Ω
I F = 2.2 A, dI/dt = 100 A/μs
I F = 2.2 A, dI/dt = 100 A/μs
I F = 2.2 A, dI/dt = 100 A/μs
I F = 2.2 A, dI/dt = 100 A/μs
I F = 2.2 A, dI/dt = 100 A/μs
I F = 2.2 A, dI/dt = 100 A/μs
I F = 2.2 A, dI/dt = 100 A/μs
I F = 2.2 A, dI/dt = 100 A/μs
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
9
8
35
21
40
11
19
11
16
10
18
16
55
35
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
www.vishay.com
3
相关PDF资料 |
PDF描述 |
|---|---|
| SI4914DY-T1-E3 | MOSFET DUAL N-CH 30V 8-SOIC |
| SI4916DY-T1-GE3 | MOSFET DUAL N-CH 30V 8-SOIC |
| SI4920DY-T1-GE3 | MOSFET DUAL N-CH 30V 8-SOIC |
| SI4932DY-T1-GE3 | MOSFET N-CH DUAL 30V 8-SOIC |
| SI4933DY-T1-GE3 | MOSFET P-CH DUAL 12V 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI4914BDY-T1-GE3 | 功能描述:MOSFET 30V 8.4A/8A DUAL NCH MOSFET w/Shottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4914DY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4914DY-T1-E3 | 功能描述:MOSFET DUAL N-CH 30V (D-S) W/SCHOTTKY RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4916DY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4916DY-T1-E3 | 功能描述:MOSFET 30 Volt 6.6/8.9 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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