- 您现在的位置：买卖IC网 > PDF目录192947 > SI4943DY-T1-E3 (VISHAY SILICONIX) 6300 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | SI4943DY-T1-E3 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 6300 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | LEAD FREE, SOP-8 |
| 文件页数： | 2/5页 |
| 文件大小： | 65K |
| 代理商： | SI4943DY-T1-E3 |
Si4943DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71682
S-21192—Rev. B, 29-Jul-02
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 mA
-1
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 16 V, VGS = 0 V
-1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = - 16 V, VGS = 0 V, TJ = 55_C
-5
mA
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 10 V
-30
A
Drain Source On State Resistancea
rDS( )
VGS = - 10 V, ID = - 8.4 A
0.016
0.019
W
Drain-Source On-State Resistancea
rDS(on)
VGS = - 4.5 V, ID = - 6.7 A
0.025
0.030
W
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 8.4 A
18
S
Diode Forward Voltagea
VSD
IS = - 1.7 A, VGS = 0 V
- 0.8
- 1.2
V
Dynamicb
Total Gate Charge
Qg
36
54
Gate-Source Charge
Qgs
VDS = - 10 V, VGS = - 10 V, ID = - 8.4 A
6.8
nC
Gate-Drain Charge
Qgd
5.0
Turn-On Delay Time
td(on)
11
17
Rise Time
tr
VDD = - 10 V, RL = 10 W
24
38
Turn-Off Delay Time
td(off)
VDD = - 10 V, RL = 10 W
ID ^ - 1 A, VGEN = - 10 V, RG = 6 W
56
85
ns
Fall Time
tf
30
45
Source-Drain Reverse Recovery Time
trr
IF = - 1.7 A, di/dt = 100 A/ms
50
80
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
6
12
18
24
30
0
1234
5
VGS = 10 thru 5 V
TC = 125_C
-55
_C
25
_C
Output Characteristics
Transfer Characteristics
VDS - Drain-to-Source Voltage (V)
-
Drain
Current
(A)
I
D
VGS - Gate-to-Source Voltage (V)
-
Drain
Current
(A)
I
D
3 V
4 V
相关PDF资料 |
PDF描述 |
|---|---|
| SI6421DQ-T1 | 7500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| SI6882EDQ-T1 | 6000 mA, 24 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| SI91822DH-20-T1 | 2 V FIXED POSITIVE LDO REGULATOR, 0.5 V DROPOUT, PDSO8 |
| SIG-21-S2.0 | STAINLESS STEEL, WIRE TERMINAL |
| SIG-21T-M2.0T | 0.89 mm2, COPPER ALLOY, TIN FINISH, WIRE TERMINAL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI4944DY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET |
| SI4944DY-T1 | 制造商:Vishay Semiconductors 功能描述: |
| SI4944DY-T1-E3 | 功能描述:MOSFET DUAL N-CH 30V (D-S) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4944DY-T1-GE3 | 功能描述:MOSFET 30V 12.2A 2.3W 9.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| Si4946BEY | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N |
发布紧急采购，3分钟左右您将得到回复。