参数资料
型号: SI5413-H(B)
厂商: AUK Corp
英文描述: IRED
中文描述: 登记合格决定
文件页数: 2/4页
文件大小: 186K
代理商: SI5413-H(B)
KSD-O2Q004-000
2
SI5413-H / SI5413-H(B)
Absolute Maximum Ratings
(Ta=25
Characteristic
Symbol
Power dissipation
P
D
Forward current
I
F
*
1
Peak forward current
I
FP
Reverse voltage
V
R
Operating temperature range
T
opr
Storage temperature range
T
stg
*
2
Soldering temperature
T
sol
*1.Duty ratio = 1/16, Pulse width = 0.1ms
*2.Keep the distance more than 2.0mm from PCB to the bottom of IRED package
Electrical / Optical Characteristics
(Ta=25
Characteristic
Symbol
Test Condition
)
Rating
145
100
1
4
-25
-30
260
Unit
mW
mA
A
V
85
100
for
10 seconds
)
Min.
Typ. Max.
Unit
Forward voltage
V
F
I
F
= 50mA
-
1.3
1.45
V
Radiant intensity
I
E
λ
P
λ
I
R
θ
1
/
2
I
F
= 50mA
10
22
-
mW/Sr
Peak wavelength
I
F
= 50mA
-
950
-
nm
Spectrum bandwidth
I
F
= 50mA
-
50
-
nm
Reverse current
*
3
Half angle
V
R
=4V
-
-
10
uA
I
F
= 50mA
-
±
30
-
deg
*3.
θ
1/2
is the off-axis angle where the luminous intensity is 1/2 the peak intensity
相关PDF资料
PDF描述
SI5414-H IRED
SI5414-H(B) IRED
SI5415-H IRED
SI5415-H(B) IRED
SI9925 N-channel enhancement mode field-effect transistor
相关代理商/技术参数
参数描述
SI5414DC-T1-GE3 功能描述:MOSFET 20V 6.0A 6.3W 17mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI5414-H 制造商:AUK 制造商全称:AUK corp 功能描述:IRED
SI5414-H(B) 制造商:AUK 制造商全称:AUK corp 功能描述:IRED
SI5414-HB 制造商:AUK 制造商全称:AUK corp 功能描述:IRED
SI54-150 制造商:DELTA 制造商全称:Delta Electronics, Inc. 功能描述:SMT Power Inductor