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| 型号： | SI5440DC-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 30V 1206-8 |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 19 毫欧 @ 9.1A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 29nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1200pF @ 10V |
| 功率 - 最大： | 6.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 1206-8 ChipFET? |
| 包装： | 标准包装 |
| 其它名称： | SI5440DC-T1-GE3DKR |
New Product
Si5440DC
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
I D (A) a
Q g (Typ.)
FEATURES
? Halogen-free According to IEC 61249-2-21
? TrenchFET ? Power MOSFET
30
0.019 at V GS = 10 V
0.024 at V GS = 4.5 V
6
6
9 nC
APPLICATIONS
? Load Switches
- Notebook PC
1206-8 ChipFET ?
1
D
D
D
D
D
D
G
D
S
Bottom V ie w
Orderin g Information: Si5440DC-T1-GE3 (Lead (P b )-free and Halogen-free)
G
S
N -Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
6 a
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
6
6 a
a, b, c
T A = 70 °C
6 a, b, c
A
Pulsed Drain Current
I DM
30
Continuous Source-Drain Diode Current
T C = 25 °C
T A = 25 °C
T C = 25 °C
I S
5.2
2.1 b, c
6.3
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
4
2.5 b, c
W
T A = 70 °C
1.6 b, c
Soldering Recommendations (Peak Temperature)
Operating Junction and Storage Temperature Range
e, f
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typical Maximum Unit
Maximum Junction-to-Ambient a, c, d t ≤ 5s
Maximum Junction-to-Foot (Drain) Steady State
R thJA
R thJF
40 50
15 20
°C/W
Notes:
a. Package limited, T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 95 °C/W.
e. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in
manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder
interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 69056
S-83037-Rev. A, 22-Dec-08
www.vishay.com
1
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相关代理商/技术参数 |
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|---|---|
| SI5441BDC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 2.5-V (G-S) MOSFET |
| SI5441BDC-T1-E3 | 功能描述:MOSFET 20V 6.1A 2.5W 45mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5441BDC-T1-GE3 | 功能描述:MOSFET 20V 6.1A 2.5W 45mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5441DC | 制造商:Vishay Siliconix 功能描述: |
| SI5441DC-T1 | 功能描述:MOSFET 20V 5.3A 2.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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