- 您现在的位置：买卖IC网 > Datasheet目录511 > SI5519DU-T1-GE3 (Vishay Siliconix)MOSFET N/P-CH 20V PWRPAK CHPFET Datasheet资料下载
参数资料
| 型号： | SI5519DU-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/14页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 20V PWRPAK CHPFET |
| 产品目录绘图： | PowerPAK ChipFET Dual |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A，4.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 36 毫欧 @ 6.1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.8V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 660pF @ 10V |
| 功率 - 最大： | 2.27W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? CHIPFET? 双 |
| 供应商设备封装： | PowerPAK? ChipFet 双 |
| 包装： | 标准包装 |
| 产品目录页面： | 1666 (CN2011-ZH PDF) |
| 其它名称： | SI5519DU-T1-GE3DKR |
Si5519DU
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
N-Channel
V DS (V)
20
R DS(on) ( Ω )
0.036 at V GS = 4.5 V
0.063 at V GS = 2.5 V
I D (A) a Q g (Typ.)
6.0
5.4 nC
6.0
? Halogen-free
? TrenchFET ? Power MOSFETs
APPLICATIONS
RoHS
COMPLIANT
P-Channel
- 20
0.064 at V GS = - 4.5 V
0.095 at V GS = - 2.5 V
- 6.0
- 6.0
6.0 nC
? Portable DC-DC Applications
PowerPAK ChipFET Dual
1
D 1
S 2
S 1
2
8
D 1
D 1
G 1
S 2
3
4
G 1
G 2
7
D 2
G 2
Marking Code
6
5
D 2
EB
XXX
Lot Tracea b ility
and Date Code
S 1
D 2
Bottom V ie w
Part #
Code
N -Channel MOSFET
P-Channel MOSFET
Orderin g Information: Si5519DU-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
T C = 25 °C
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
V DS
V GS
I D
I DM
I S
20
6.0 a
6.0 a
6.0 a, b, c
4.9 b, c
25
6.0 a
1.9 b, c
± 12
- 20
6.0 a
-
- 6.0 a
- 4.8 b, c
- 3.8 b, c
- 20
- 6.0 a
- 1.9 b, c
V
A
T C = 25 °C
10.4
10.4
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
6.6
2.27 b, c
6.6
2.27 b, c
W
T A = 70 °C
1.45 b, c
1.45 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Maximum Junction-to-Ambient b, f t ≤ 5s
Maximum Junction-to-Case (Drain) Steady State
Symbol
R thJA
R thJC
Typ.
43
9.5
Max.
55
12
Typ.
43
9.5
Max.
55
12
Unit
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Reliability Manual for profile. The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated)
as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequade bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 74406
S-81449-Rev. B, 23-Jun-08
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| SI5853CDC-T1-E3 | MOSFET P-CH 20V 4A 1206-8 |
| SI5853DDC-T1-E3 | MOSFET P-CH D-S 20V 1206-8 |
| SI5855CDC-T1-E3 | MOSFET P-CH/SCHOTTKY 20V 1206-8 |
| SI5857DU-T1-GE3 | MOSFET P-CH D-S 20V PPAK CHIPFET |
| SI5858DU-T1-GE3 | MOSFET N-CH 20V 6A PPAK CHIPFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI552 | 制造商:SILABS 制造商全称:SILABS 功能描述:DUAL FREQUENCY VCXO (10 MHZ TO 1.4 GHZ) |
| SI5540 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SiPHY OC-192/STM-64 TRANSMITTER |
| SI5540-BC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SiPHY OC-192/STM-64 TRANSMITTER |
| Si5580 | 功能描述:电机驱动器 PKG 5.5A 80VDC IND RoHS:否 制造商:Applied Motion 电机驱动类型:2035 Step 电源电压:12 V to 35 V 功率额定值:70 W 每转步距分辨率:200 to 400 框架大小 (NEMA): |
| SI5600 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SiPHY-TM OC-192/STM-64 SONET/SDH TRANSCEIVER |
发布紧急采购，3分钟左右您将得到回复。