参数资料
型号: SI7145DP-T1-GE3
厂商: Vishay Siliconix
文件页数: 1/9页
文件大小: 0K
描述: MOSFET P-CH D-S 30V 8-SOIC
标准包装: 1
系列: TrenchFET®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 60A
开态Rds(最大)@ Id, Vgs @ 25° C: 2.6 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 2.3V @ 250µA
闸电荷(Qg) @ Vgs: 413nC @ 10V
输入电容 (Ciss) @ Vds: 15660pF @ 15V
功率 - 最大: 104W
安装类型: 表面贴装
封装/外壳: PowerPAK? SO-8
供应商设备封装: PowerPAK? SO-8
包装: 标准包装
其它名称: SI7145DP-T1-GE3DKR
New Product
Si7145DP
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
I D (A)
Q g (Typ.)
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
- 30
0.0026 at V GS = - 10 V
0.00375 at V GS = - 4.5 V
- 60 d
- 60 d
129 nC
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? 100 % UIS Tested
PowerPAK SO-8
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
S
6.15 mm
1
S
2
S
S
5.15 mm
? Adaptor Switch
- Notebook Computers
3
4
G
G
D
8
7
D
D
6
5
D
Bottom View
Ordering Information: Si7145DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
D
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 30
± 20
60 d
-
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
- 60 d
- 36.5 a, b
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
- 29.2 a, b
- 100
- 60 d
- 5.6 a, b
- 50
125
A
mJ
T C = 25 °C
104
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
66.6
6.25 a, b
W
T A = 70 °C
4.0 a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) e, f
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a, c
Maximum Junction-to-Case
t ≤ 10 s
Steady State
R thJA
R thJC
15
0.9
20
1.2
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 54 °C/W.
d. Package limited.
e. See Solder Profile ( www.vishay.com/doc?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 64814
S09-0872-Rev. A, 18-May-09
www.vishay.com
1
相关PDF资料
PDF描述
SI7148DP-T1-GE3 MOSFET N-CH D-S 75V PPAK 8SOIC
SI7170DP-T1-GE3 MOSFET N-CH 30V 40A PPAK 8SOIC
SI7172DP-T1-GE3 MOSFET N-CH 200V 25A PPAK 8SOIC
SI7196DP-T1-E3 MOSFET N-CH D-S 30V PPAK 8SOIC
SI7216DN-T1-GE3 MOSFET DL N-CH 40V PPAK 1212-8
相关代理商/技术参数
参数描述
SI7148DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 75-V (D-S) MOSFET
SI7148DP-T1-E3 功能描述:MOSFET 75V 28A 0.011Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7148DP-T1-GE3 功能描述:MOSFET 75V 28A 96W 11mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7149ADP-T1-GE3 制造商:Vishay Siliconix 功能描述:MOSFET P-CH 30V PPAK SO-8 制造商:Vishay Intertechnologies 功能描述:MOSFET -30V 5.2mOhm@10V -50A P-Ch G-III
SI7149DP-T1-E3 制造商:Vishay Semiconductors 功能描述: