参数资料
型号: SI7425DN-T1-E3
厂商: Vishay Siliconix
文件页数: 5/12页
文件大小: 0K
描述: MOSFET P-CH D-S 12V PPAK 1212-8
标准包装: 3,000
系列: TrenchFET®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 12V
电流 - 连续漏极(Id) @ 25° C: 8.3A
开态Rds(最大)@ Id, Vgs @ 25° C: 16 毫欧 @ 12.6A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 300µA
闸电荷(Qg) @ Vgs: 39nC @ 4.5V
功率 - 最大: 1.5W
安装类型: 表面贴装
封装/外壳: PowerPAK? 1212-8
供应商设备封装: PowerPAK? 1212-8
包装: 带卷 (TR)
Si7425DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72400 .
Document Number: 72400
S-83051-Rev. D, 29-Dec-08
www.vishay.com
5
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