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参数资料
| 型号： | SI7636DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 30V PPAK 8SOIC |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 17A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 5600pF @ 15V |
| 功率 - 最大： | 1.9W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 带卷 (TR) |
Si7636DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.004 at V GS = 10 V
0.0048 at V GS = 4.5 V
I D (A)
28
25
Q g (Typ.)
36
? Halogen-free According to IEC 61249-2-21
Available
? Ultra-Low On-Resistance Using High Density
TrenchFET ? Gen II Power MOSFET Technology
? Q g Optimized
? New Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
? 100 % R g Tested
PowerPAK SO-8
APPLICATIONS
?
Low-Side DC/DC Conversion
- Notebook
6.15 mm
1
S
2
S
3
S
5.15 mm
G
4
- Server
- Workstation
? Synchronous Rectifier, POL
D
D
8
7
D
D
6
D
5
Bottom V ie w
G
Ordering Information: Si7636DP-T1-E3 (Lead (Pb)-free)
Si7636DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
30
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current (10 μs Pulse Width)
Continuous Source Current (Diode Conduction) a
Avalanche Current
T A = 25 °C
T A = 70 °C
L = 0.1 mH
I D
I DM
I S
I AS
28
22
4.3
60
50
17
13
1.7
A
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b,c
T A = 25 °C
T A = 70 °C
P D
T J , T stg
5.2
3.3
- 55 to 150
260
1.9
1.2
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
Steady State
R thJA
19
52
24
65
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R thJC
1.3
1.8
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72768
S09-0272-Rev. G, 16-Feb-09
www.vishay.com
1
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相关代理商/技术参数 |
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| SI7652DP-T1-E3 | 功能描述:MOSFET 30V 15A 3.9W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7652DP-T1-GE3 | 功能描述:MOSFET 30V 15A 3.9W 15.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7655ADN-T1-GE3 | 制造商:Vishay Siliconix 功能描述:MOSFET P-CHAN 20V D-S 1212-8S |
| SI7655DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20 V (D-S) MOSFET |
| SI7655DN-T1-GE3 | 功能描述:MOSFET -20V 3.6mOhm@10V 40A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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