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参数资料
| 型号： | SI7726DN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/14页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 35A 1212-8 |
| 产品目录绘图： | DN-T1-E3 Series 1212-8 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 35A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.5 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 2.6V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 43nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1765pF @ 15V |
| 功率 - 最大： | 52W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 |
| 供应商设备封装： | PowerPAK? 1212-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1660 (CN2011-ZH PDF) |
| 其它名称： | SI7726DN-T1-GE3DKR |
Si7726DN
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.0095 at V GS = 10 V
0.0125 at V GS = 4.5 V
I D (A) e
35
35
Q g (Typ.)
12.5 nC
? Halogen-free
? SkyFET Monolithic TrenchFET ? Power
MOSFET and Schottky Diode
? Low Thermal Resistance PowerPAK ?
RoHS
COMPLIANT
Package with Small Size and Low 1.07 mm Profile
? 100 % R g Tested
PowerPAK 1212-8
APPLICATIONS
? DC/DC Converter
3.30 mm
1
S
2
S
3
S
3.30 mm
G
- Notebook
- POL
D
4
D
8
7
D
D
6
5
D
G
Schottky Diode
Bottom V ie w
Orderin g Information: Si7726D N -T1-GE3 (Lead (P b )-free and Halogen-free)
N -Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
35 e
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
I D
I DM
I S
35 e
14.9 a, b
11.8 a, b
60
35 e
5.4 a, b
A
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I AS
E AS
20
20
mJ
T C = 25 °C
52
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
33
3.8 a, b
W
T A = 70 °C
2.4 a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) c, d
T J , T stg
- 50 to 150
260
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile ( h ttp://www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 68600
S-81737-Rev. B, 04-Aug-08
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| SI7738DP-T1-E3 | MOSFET N-CH D-S 150V PPAK 8SOIC |
| SI7758DP-T1-GE3 | MOSFET N-CH 30V 60A PPAK 8SOIC |
| SI7802DN-T1-GE3 | MOSFET N-CH 250V 1.24A 1212-8 |
| SI7810DN-T1-GE3 | MOSFET N-CH D-S 100V 1212-8 PPAK |
| SI7812DN-T1-GE3 | MOSFET N-CH 75V 16A 1212-8 PPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7738DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 150-V (D-S) MOSFET |
| SI7738DP-T1-E3 | 功能描述:MOSFET 150V 30A 96W 38mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7738DP-T1-GE3 | 功能描述:MOSFET 150V 30A 96W 38mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7742DP-T1-GE3 | 功能描述:MOSFET 30V 60A 83W 3.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7748DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET with Schottky Diode |
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