- 您现在的位置：买卖IC网 > Datasheet目录513 > SI7812DN-T1-GE3 (Vishay Siliconix)MOSFET N-CH 75V 16A 1212-8 PPAK Datasheet资料下载
参数资料
| 型号： | SI7812DN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/14页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 75V 16A 1212-8 PPAK |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 16A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 37 毫欧 @ 7.2A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 24nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 840pF @ 35V |
| 功率 - 最大： | 52W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 |
| 供应商设备封装： | PowerPAK? 1212-8 |
| 包装： | 标准包装 |
| 其它名称： | SI7812DN-T1-GE3DKR |
Si7812DN
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
75
R DS(on) ( Ω )
0.037 at V GS = 10 V
0.046 at V GS = 4.5 V
I D (A)
16 e
16 e
Q g (Typ.)
8 nC
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? Low Thermal Resistance PowerPAK ?
Package with Small Size and Low 1.07 mm
PowerPAK 1212- 8
Profile
APPLICATIONS
3.30 mm
1
S
S
3.30 mm
? Primary Side Switch
D
2
3
S
G
4
D
8
7
D
D
G
6
5
D
Bottom V ie w
Orderin g Information: Si7 8 12D N -T1-E3 (Lead (P b )-free)
Si7 8 12D N -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
75
± 20
16 e
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
16 e
7.2 a, b
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
5.7 a, b
25
16 e
3.2 a, b
15
11
A
mJ
T C = 25 °C
52
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
33
3.8 a, b
W
T A = 70 °C
2.4 a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) c, d
T J , T stg
- 55 to 150
260
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73332
S-83050-Rev. D, 29-Dec-08
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| SI7842DP-T1-GE3 | MOSFET DL N-CH 30V PPAK 8-SOIC |
| SI7846DP-T1-GE3 | MOSFET N-CH D-S 150V PPAK 8SOIC |
| SI7848BDP-T1-E3 | MOSFET N-CH D-S 40V PPAK 8SOIC |
| SI7868ADP-T1-GE3 | MOSFET N-CH D-S 20V PPAK 8SOIC |
| SI7872DP-T1-GE3 | MOSFET N-CH D-S 30V 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7815 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Positive Voltage Regulator |
| SI7818 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Positive Voltage Regulator |
| SI7818DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 150-V (D-S) MOSFET |
| SI7818DN-T1-E3 | 功能描述:MOSFET 150V 3.4A 3.8W 135mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7818DN-T1-GE3 | 功能描述:MOSFET 150V 3.4A 3.8W 135mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。