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| 型号： | SI7842DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET DL N-CH 30V PPAK 8-SOIC |
| 产品目录绘图： | 8-SOIC Mosfet Package |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 22 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1663 (CN2011-ZH PDF) |
| 其它名称： | SI7842DP-T1-GE3DKR |
Si7842DP
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.022 at V GS = 10 V
0.030 at V GS = 4.5 V
I D (A)
10
8.5
? Halogen-free According to IEC 61249-2-21
Available
? LITTLE FOOT ? Plus Schottky
? New Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
SCHOTTKY PRODUCT SUMMARY
? 100 % R g Tested
V DS (V)
30
V SD (V)
Diode Forward Voltage
0.50 V at 1.0 A
I F (A)
3.0
APPLICATIONS
? Bus and Logic DC-DC
PowerPAK SO-8
6.15 mm
1
S1
G1
5.15 mm
D 1
D 2
2
3
S2
4
G2
8
D1
D1
G 1
G 2
Schottky Diode
7
D2
6
D2
5
Bottom View
S 1
N-Channel MOSFET
S 2
N-Channel MOSFET
Ordering Information: Si7842DP-T1-E3 (Lead (Pb)-free)
Si7842DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
30
± 20
Steady State
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
10
6.0
30
6.3
5.0
A
Continuous Source Current (Diode Conduction) a
I S
2.9
1.1
Maximum Power Dissipation a
T A = 25 °C
T A = 70 °C
P D
3.5
2.2
1.4
0.9
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b,c
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
MOSFET
Typical Maximum
Schottky
Typical Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
26 35
60 85
3.9 5.5
26 35
60 85
3.9 5.5
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71617
S09-0227-Rev. D, 09-Feb-09
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
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| SI7872DP-T1-GE3 | MOSFET N-CH D-S 30V 8-SOIC |
| SI7898DP-T1-GE3 | MOSFET N-CH 150V 3A PPAK 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7844DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET |
| SI7844DP-T1 | 功能描述:MOSFET 30V 10A 3.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7844DP-T1-E3 | 功能描述:MOSFET 30V 10A 3.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7844DP-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI7844DP-T1-GE3 | 功能描述:MOSFET Dual N-Ch PWM Opt. 30V 22mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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