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| 型号： | SI7868ADP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 20V PPAK 8SOIC |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 40A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.25 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 1.6V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 150nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6110pF @ 10V |
| 功率 - 最大： | 83W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 带卷 (TR) |
Si7868ADP
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
20
R DS(on) ( Ω )
0.00225 at V GS = 10 V
0.00275 at V GS = 4.5 V
I D (A) a
40
40
Q g (Typ.)
46 nC
?
?
?
?
Halogen-free available
TrenchFET ? Power MOSFET
Low R DS(on)
PWM (Q gd and R g ) Optimized
RoHS
COMPLIANT
PowerPAK SO-8
?
100 % R g Tested
APPLICATIONS
6.15 mm
1
S
S
5.15 mm
? Low Output Voltage Synchronous Rectifier
D
2
3
S
G
4
D
8
7
D
D
G
6
D
5
Bottom View
S
Ordering Information: Si7868ADP-T1-E3 (Lead (Pb)-free)
Si7868ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
20
± 16
40
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
32
35 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
28 b, c
70
40
4.9 b, c
30
45
A
mJ
T C = 25 °C
83
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
53
5.4 b, c
W
T A = 70 °C
3.4 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
R thJA
R thJC
18
1.0
23
1.5
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile ( h ttp://www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 73384
S-80438-Rev. B, 03-Mar-08
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7868DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Si7868ADP vs. Si7868DP Specification Comparison |
| SI786CG | 功能描述:DC/DC 开关控制器 3.3V Power Sup Cont RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
| SI786CG-E3 | 功能描述:开关变换器、稳压器与控制器 Dual 3.3V Step-Down RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| SI786CG-T1 | 功能描述:开关变换器、稳压器与控制器 Dual 3.3V Step-Down RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| SI786CG-T1-E3 | 功能描述:开关变换器、稳压器与控制器 Dual 3.3V Step-Down RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
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