参数资料
型号: SI7898DP-T1-GE3
厂商: Vishay Siliconix
文件页数: 1/8页
文件大小: 0K
描述: MOSFET N-CH 150V 3A PPAK 8SOIC
产品目录绘图: DP-T1-(G)E3 Series 8-SOIC
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 150V
电流 - 连续漏极(Id) @ 25° C: 3A
开态Rds(最大)@ Id, Vgs @ 25° C: 85 毫欧 @ 3.5A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 21nC @ 10V
功率 - 最大: 1.9W
安装类型: 表面贴装
封装/外壳: PowerPAK? SO-8
供应商设备封装: PowerPAK? SO-8
包装: 标准包装
产品目录页面: 1663 (CN2011-ZH PDF)
其它名称: SI7898DP-T1-GE3DKR
Si7898DP
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
150
R DS(on) ( Ω )
0.085 at V GS = 10 V
0.095 at V GS = 6.0 V
I D (A)
4.8
4.5
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFETs
for Fast Switching
? New Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
? PWM Optimized
PowerPAK SO-8
? 100 % R g Tested
APPLICATIONS
6.15 mm
1
S
S
5.15 mm
? DC/DC Power Supply Primary Side Switch
2
3
S
4
G
? Industrial Motor Drives
D
D
8
7
D
D
6
5
D
G
Bottom V ie w
S
Ordering Information: Si7898DP-T1-E3 (Lead (Pb)-free)
Si7898DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
150
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction) a
T A = 25 °C
T A = 70 °C
L = 0.1 mH
I D
I DM
I AS
I S
4.8
3.8
4.1
25
10
3.0
2.4
1.6
A
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b,c
T A = 25 °C
T A = 70 °C
P D
T J , T stg
5.0
3.2
- 55 to 150
260
1.9
1.2
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
20
52
2.1
25
65
2.6
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71873
S09-0227-Rev. D, 09-Feb-09
www.vishay.com
1
相关PDF资料
PDF描述
SI7904BDN-T1-GE3 MOSFET N-CH DL 20V PPAK 1212-8
SI7905DN-T1-E3 MOSFET DUAL P-CH D-S 40V 1212-8
SI7913DN-T1-GE3 MOSFET P-CH 20V 1212-8 PPAK
SI7922DN-T1-GE3 MOSFET DL N-CH 100V PPAK 1212-8
SI7923DN-T1-GE3 MOSFET P-CH D-S 30V 1212-8 PPAK
相关代理商/技术参数
参数描述
SI78XX 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Positive Voltage Regulator
SI7900 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Specification Comparison
SI7900AEDN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 20-V (D-S) MOSFET, Common Drain
SI7900AEDN_08 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 20-V (D-S) MOSFET, Common Drain
SI7900AEDN-T1 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 20-V (D-S) MOSFET, Common Drain