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| 型号： | SI7922DN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET DL N-CH 100V PPAK 1212-8 |
| 产品目录绘图： | PowerPak 1212-8 Bottom |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 195 毫欧 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8nC @ 10V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 双 |
| 供应商设备封装： | PowerPAK? 1212-8 Dual |
| 包装： | 标准包装 |
| 产品目录页面： | 1663 (CN2011-ZH PDF) |
| 其它名称： | SI7922DN-T1-GE3DKR |
Si7922DN
Vishay Siliconix
Dual N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
R DS(on) ( Ω )
I D (A)
? Halogen-free Option Available
? TrenchFET ? Power MOSFET
100
0.195 at V GS = 10 V
0.230 at V GS = 6 V
2.5
2.3
? New Low Thermal Resistance PowerPAK ?
Package, 1/3 the Space of An SO-8 While
RoHS
COMPLIANT
Thermally Comparable
? PWM Optimized
APPLICATIONS
? DC/DC Primary-Side Switch
PowerPAK 1212-8
? 48 V Battery Monitoring
3.30 mm
1
S1
G1
3.30 mm
D 1
D 2
2
3
S2
G2
4
D1
8
D1
7
6
D2
D2
G 1
G 2
5
Bottom View
Ordering Information: Si7922DN-T1-E3 (Lead (Pb)-free)
Si7922DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S 1
N-Channel MOSFET
S 2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
100
± 20
Steady State
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Continuous Source Current (Diode Conduction) a
Maximum Power Dissipation a
T A = 25 °C
T A = 85 °C
0.1 mH
T A = 25 °C
T A = 85 °C
I D
I DM
I AS
E AS
I S
P D
2.5
1.8
2.2
2.6
1.4
10
5
1.25
1.8
1.3
1.1
1.3
0.69
A
mJ
A
W
Operating Junction and Storage Temperature Range
Soldering Recommendations b, c
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
38
77
4.3
48
94
5.4
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72031
S-81544-Rev. E, 07-Jul-08
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7923DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 30-V (D-S) MOSFET |
| SI7923DN_06 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 30-V (D-S) MOSFET |
| SI7923DN-T1-E3 | 功能描述:MOSFET DUAL P-CH 30V (D-S) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7923DN-T1-GE3 | 功能描述:MOSFET 30V 6.4A 2.8W 47mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7924 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator |
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