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| 型号： | SI7940DP-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 12V 7.6A 8SOIC |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 17 毫欧 @ 11.8A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17nC @ 4.5V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 双 |
| 供应商设备封装： | PowerPAK? SO-8 Dual |
| 包装： | 带卷 (TR) |
Si7940DP
Vishay Siliconix
Dual N-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
12
R DS(on) ( Ω )
0.017 at V GS = 4.5 V
0.025 at V GS = 2.5 V
I D (A)
11.8
9.8
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? New Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
? PWM Optimized
? 100 % R g Tested
PowerPAK SO-8
APPLICATIONS
? Point-of-Load Synchronous Rectifier
6.15 mm
1
S1
2
G1
3
S2
5.15 mm
G2
- 5 V or 3.3 V BUS Step Down
- Q g Optimized for 500 kHz and Operation
? Synchronous Buck Shoot-Through Resistant
8
D1
D1
4
D 1
D 2
7
D2
6
D2
5
Bottom View
Ordering Information: Si7940DP-T1-E3 (Lead (Pb)-free)
Si7940DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
G 1
S 1
N-Channel MOSFET
G 2
S 2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
12
±8
Steady State
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
11.8
9.5
20
7.6
6.1
A
Continuous Source Current (Diode Conduction) a
I S
2.9
1.1
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 70 °C
P D
T J , T stg
3.5
2.2
- 55 to 150
260
1.4
0.9
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
26
60
3.9
35
85
5.5
°C/W
Notes
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71845
S09-0268-Rev. E, 16-Feb-09
www.vishay.com
1
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PDF描述 |
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| SI7958DP-T1-GE3 | MOSFET DL N-CH 40V PPAK 8-SOIC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7940DP-T1-GE3 | 功能描述:MOSFET Dual P-Ch 12V 17mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7941DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 30-V (D-S) MOSFET |
| SI7941DP-T1 | 功能描述:MOSFET 30V 9.0A 1.4W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7941DP-T1-E3 | 功能描述:MOSFET 30V 9.0A 1.4W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7942DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 100-V (D-S) MOSFET |
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