参数资料
型号: SI7940DP-T1-E3
厂商: Vishay Siliconix
文件页数: 5/8页
文件大小: 0K
描述: MOSFET 2N-CH 12V 7.6A 8SOIC
标准包装: 3,000
系列: TrenchFET®
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 12V
电流 - 连续漏极(Id) @ 25° C: 7.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 17 毫欧 @ 11.8A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 17nC @ 4.5V
功率 - 最大: 1.4W
安装类型: 表面贴装
封装/外壳: PowerPAK? SO-8 双
供应商设备封装: PowerPAK? SO-8 Dual
包装: 带卷 (TR)
Si7940DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71845 .
Document Number: 71845
S09-0268-Rev. E, 16-Feb-09
www.vishay.com
5
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相关代理商/技术参数
参数描述
SI7940DP-T1-GE3 功能描述:MOSFET Dual P-Ch 12V 17mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7941DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 30-V (D-S) MOSFET
SI7941DP-T1 功能描述:MOSFET 30V 9.0A 1.4W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7941DP-T1-E3 功能描述:MOSFET 30V 9.0A 1.4W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7942DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 100-V (D-S) MOSFET