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| 型号： | SI7945DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET DL P-CH 30V PPAK 8-SOIC |
| 产品目录绘图： | 8-SOIC Mosfet Package |
| 标准包装： | 1 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 10.9A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 74nC @ 10V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1666 (CN2011-ZH PDF) |
| 其它名称： | SI7945DP-T1-GE3DKR |
Si7945DP
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 30
R DS(on) ( Ω )
0.020 at V GS = - 10 V
0.031 at V GS = - 4.5 V
I D (A)
- 10.9
- 8.8
Q g (Typ.)
49
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFETs
? New Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
APPLICATIONS
PowerPAK SO-8
? Battery and Load Switching
- Notebook PCs
- Game Systems
6.15 mm
1
S1
2
G1
S2
5.15 mm
- Set-Top Box
S 1
S 2
D1
3
4
G2
8
D1
G 1
G 2
7
D2
6
D2
5
Bottom View
Ordering Information: Si7945DP-T1-E3 (Lead (Pb)-free)
Si7945DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D 1
P-Channel MOSFET
D 2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
- 30
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 70 °C
T A = 25 °C
T A = 70 °C
I D
I DM
I S
P D
T J , T stg
- 10.9 - 7.0
- 8.7 - 5.6
- 30
- 2.9 - 1.2
3.5 1.4
2.2 0.9
- 55 to 150
260
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
26
60
2.5
35
85
3.1
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72090
S09-0227-Rev. D, 09-Feb-09
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| SI7948DP-T1-GE3 | MOSFET N-CH DL 60V PWRPAK 8-SOIC |
| SI7956DP-T1-GE3 | MOSFET N-CH D-S 150V 8-SOIC |
| SI7958DP-T1-GE3 | MOSFET DL N-CH 40V PPAK 8-SOIC |
| SI7964DP-T1-GE3 | MOSFET DUAL N-CH 60V PPAK 8SOIC |
| SI7994DP-T1-GE3 | MOSFET N-CH DL 30V PWRPAK 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7946DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 150-V (D-S) MOSFET |
| SI7946DP_06 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 150-V (D-S) MOSFET |
| SI7946DP-T1 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 150-V (D-S) MOSFET |
| SI7946DP-T1-E3 | 功能描述:MOSFET DUAL N-CH 150V (D-S) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7946DP-T1-GE3 | 功能描述:MOSFET 150V 3.3A 3.5W 150mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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