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| 型号： | SI7994DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DL 30V PWRPAK 8-SOIC |
| 产品目录绘图： | 8-SOIC Mosfet Package |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.6 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 80nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3500pF @ 15V |
| 功率 - 最大： | 3.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1664 (CN2011-ZH PDF) |
| 其它名称： | SI7994DP-T1-GE3DKR |
New Product
Si7994DP
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.0056 at V GS = 10 V
0.007 at V GS = 4.5 V
I D (A) a
60
60
Q g (Typ.)
24 nC
? Halogen-free
? TrenchFET ? Power MOSFET
APPLICATIONS
RoHS
COMPLIANT
? System Power DC/DC
? Notebook
PowerPAK SO-8
? Server
6.15 mm
1
S1
G1
5.15 mm
D 1
D 2
2
3
S2
G2
4
D1
8
7
D1
G 1
G 2
D2
6
5
D2
Bottom V ie w
Orderin g Information: Si7994DP-T1-GE3 (Lead (P b )-free and Halogen-free)
S 1
N -Channel MOSFET
S 2
N -Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
60 a
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 85 °C
T A = 25 °C
T A = 85 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
60 a
20 b, c
16 b, c
60
38
2.9 b, c
46
A
Maximum Power Dissipation
T C = 85 °C
T A = 25 °C
P D
29
3.5 b, c
W
T A = 85 °C
2.2 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typical Maximum Unit
Maximum Junction-to-Ambient b, f t ≤ 10 s
Maximum Junction-to-Case (Drain) Steady State
R thJA
R thJC
26 35
2.2 2.7
°C/W
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile ( http://www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 85 °C/W.
Document Number: 69974
S-80895-Rev. B, 21-Apr-08
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7997DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 30 V (D-S) MOSFET |
| SI7997DP-T1-GE3 | 功能描述:MOSFET -30V 5.5mOhm@10V 60A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7998DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET |
| SI7998DP-T1-GE3 | 功能描述:MOSFET 30V 25/30A 93/53mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI79XX | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator |
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