- 您现在的位置：买卖IC网 > Datasheet目录514 > SI7998DP-T1-GE3 (Vishay Siliconix)MOSFET 2N-CH 30V 25A PPAK 8SOIC Datasheet资料下载
参数资料
| 型号： | SI7998DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/14页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 30V 25A PPAK 8SOIC |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 25A，30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.3 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1100pF @ 15V |
| 功率 - 最大： | 22W，40W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 双 |
| 供应商设备封装： | PowerPAK? SO-8 Dual |
| 包装： | 标准包装 |
| 其它名称： | SI7998DP-T1-GE3DKR |
New Product
Si7998DP
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
0.0093 at V GS = 10 V
Channel-1 30
0.0124 at V GS = 4.5 V
I D (A) a
25
25
Q g (Typ.)
8.2
FEATURES
? Halogen-free According to IEC 61249-2-21
? TrenchFET ? Power MOSFET
? PWM Optimized
Channel-2
30
0.0053 at V GS = 10 V
0.007 at V GS = 4.5 V
30
30
15.3
APPLICATIONS
? System Power DC/DC
PowerPAK SO- 8
6.15 mm
1
S1
G1
5.15 mm
D 1
D 2
2
3
S2
G2
4
D1
8
7
D1
G 1
G 2
D2
6
5
D2
Bottom View
Orderin g Information: Si799 8 DP-T1-GE3 (Lead (P b )-free and Halogen-free)
S 1
N -Channel MOSFET
S 2
N -Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Channel-1
30
± 20
25 a
Channel-2
30
± 20
30 a
Unit
V
15
3.0
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Source-Drain Current Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
25 a
b, c
12 b, c
60
19
b, c
22
30 a
21 b, c
17 b, c
80
30 a
3.3 b, c
40
A
3.6
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
14
b, c
25
4.0 b, c
W
T A = 70 °C
2.3 b, c
2.5 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ.
Max.
Typ.
Max.
Unit
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
R thJA
R thJC
26
4
35
5.5
22
2.2
31
3.1
°C/W
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile ( www.vishay.com/ppg?73257 ) . The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions for channel 1 and channel 2 is 80 °C/W.
Document Number: 68970
S09-0269-Rev. B, 16-Feb-09
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| SI8405DB-T1-E3 | MOSFET P-CH 12V 3.6A 2X2 4-MFP |
| SI8417DB-T2-E1 | MOSFET P-CH 12V 14.5A 2X2 6MFP |
| SI8439DB-T1-E1 | MOSFET P-CH 8V D-S MICROFOOT |
| SI8441DB-T2-E1 | MOSFET P-CH 20V 10.5A 2X2 6MFP |
| SI8447DB-T2-E1 | MOSFET P-CH D-S 20V MICROFOOT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI79XX | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator |
| SI79XXA | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator |
| SI-7TNL2.140G-T | 制造商:HITACHIMETAL 功能描述: |
| SI-80000Z | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SI-80000Z |
| SI-80005-F | 制造商:BEL 制造商全称:Bel Fuse Inc. 功能描述:SI-80005-F |
发布紧急采购，3分钟左右您将得到回复。