参数资料
型号: SI8439DB-T1-E1
厂商: Vishay Siliconix
文件页数: 1/11页
文件大小: 0K
描述: MOSFET P-CH 8V D-S MICROFOOT
标准包装: 1
系列: TrenchFET®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 8V
电流 - 连续漏极(Id) @ 25° C: 5.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 25 毫欧 @ 1.5A,4.5V
Id 时的 Vgs(th)(最大): 800mV @ 250µA
闸电荷(Qg) @ Vgs: 50nC @ 4.5V
功率 - 最大: 1.1W
安装类型: 表面贴装
封装/外壳: 4-UFBGA
供应商设备封装: 4-Microfoot
包装: 标准包装
其它名称: SI8439DB-T1-E1DKR
Si8439DB
Vishay Siliconix
P-Channel 8 V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
? TrenchFET ? Power MOSFET: 1.2 V Rated
V DS (V)
R DS(on) ( ? ) Max.
I D
(A) a, e
Q g (typ.)
?
Ultra-Small 1.6 mm x 1.6 mm Maximum Outline
0.025 at V GS = - 4.5 V
0.030 at V GS = - 2.5 V
- 9.2
- 8.4
?
?
Ultra-Thin 0.6 mm Maximum Height
Material categorization:
-8
0.037 at V GS = - 1.8 V
0.061 at V GS = - 1.5 V
0.125 at V GS = - 1.2 V
- 7.6
- 5.9
-1
33
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
? Low Threshold Load Switch for Portable Devices
- Low Power Consumption
- Increased Battery Life
? Ultra Low Voltage Load Switch
MICRO FOOT ?
3
B u mp Side V ie w
2
Backside V ie w
S
4
D
S
D
G
1
8 439
xxx
G
Device Markin g : 8 439
xxx = Date/Lot Tracea b ility Code
Orderin g Information: Si 8 439DB-T1-E1 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
D
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T A = 25 °C
Symbol
V DS
V GS
Limit
-8
±5
- 9.2 a
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
T A = 70 °C
T A = 25 °C
T A = 70 °C
T A = 25 °C
T A = 25 °C
T A = 25 °C
I D
I DM
I S
- 7.4 a
- 5.9 b
- 4.7 b
- 25
- 2.3 a
- 0.92 b
2.7 a
A
Maximum Power Dissipation
T A = 70 °C
T A = 25 °C
P D
1.8 a
1.1 b
W
T A = 70 °C
0.73 b
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
Package Reflow Conditions c
VPR
IR/Convection
260
260
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on T A = 25 °C.
Document Number: 63839
S13-1703-Rev. B, 29-Jul-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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