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| 型号： | SI8405DB-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 3.6A 2X2 4-MFP |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 55 毫欧 @ 1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 950mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 4.5V |
| 功率 - 最大： | 1.47W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 4-XFBGA，CSPBGA |
| 供应商设备封装： | 4-Microfoot |
| 包装： | 带卷 (TR) |
Si8405DB
Vishay Siliconix
12 V P-Channel 1.8 V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
? TrenchFET ? Power MOSFET
V DS (V)
- 12
R DS(on) ( ? )
0.055 at V GS = - 4.5 V
0.070 at V GS = - 2.5 V
0.090 at V GS = - 1.8 V
I D (A)
- 4.9
- 4.4
-4
? MICRO FOOT ? Chipscale Packaging
Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area
? Material categorization:
For definitions of compliance please see
MICRO FOOT
www.vishay.com/doc?99912
Bump Side View
Backside View
APPLICATIONS
3
2
? PA, Battery and Load Switch
S
D
D
8405
xxx
? Battery Charger Switch
G
4
S
G
1
Device Marking: 8405
xxx = Date/Lot Traceability Code
Ordering Information: Si8405DB-T1-E1 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
D
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
Steady State
- 12
±8
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
- 4.9
- 3.9
- 10
- 3.6
- 2.8
A
Continuous Source Current (Diode Conduction) a
I S
- 2.5
- 1.3
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Package Reflow Conditions b
T A = 25 °C
T A = 70 °C
IR/Convection
P D
T J , T stg
2.77
1.77
- 55 to 150
260
1.47
0.94
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (drain)
t ? 5s
Steady State
Steady State
R thJA
R thJF
35
72
16
45
85
20
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
c. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
Document Number: 71814
S13-1847-Rev. F, 19-Aug-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI-8405L | 制造商:SANKEN 制造商全称:Sanken electric 功能描述:Separate Excitation Switching Type with Coil |
| SI-8405NH | 制造商:ALLEGRO 制造商全称:Allegro MicroSystems 功能描述:Surface-Mount, Synchronous Rectifier Step-down Switching Mode Regulator Control ICs |
| SI-8405NL | 制造商:SANKEN 制造商全称:Sanken electric 功能描述:Surface-Mount Synchronous Rectifier Step-down Switching Mode Regulator Control ICs |
| SI8406DB | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20 V (D-S) MOSFET |
| SI8406DB-T2-E1 | 功能描述:MOSFET 20V 16A 13W 33mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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