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| 型号： | SI8405DB-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 3.6A 2X2 4-MFP |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 55 毫欧 @ 1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 950mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 4.5V |
| 功率 - 最大： | 1.47W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 4-XFBGA，CSPBGA |
| 供应商设备封装： | 4-Microfoot |
| 包装： | 带卷 (TR) |
Si8405DB
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = - 250 μA
- 0.45
- 0.7
- 0.95
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 8 V
V DS = - 12 V, V GS = 0 V
V DS = - 12 V, V GS = 0 V, T J = 70 °C
V DS ? - 5 V, V GS = - 4.5 V
V GS = - 4.5 V, I D = - 1 A
-5
0.045
± 100
-1
-5
0.055
nA
μA
A
Drain-Source On-State Resistance a
R DS(on)
V GS = - 2.5 V, I D = - 1 A
0.055
0.070
?
V GS = - 1.8 V, I D = - 1 A
0.073
0.090
Forward Transconductance a
g fs
V DS = - 10 V, I D = - 1 A
6
S
Diode Forward Voltage a
V SD
I S = - 1 A, V GS = 0 V
- 0.73
- 1.1
V
Dynamic b
Total Gate Charge
Q g
14
21
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q gs
Q gd
t d(on)
t r
V DS = - 6 V, V GS = - 4.5 V, I D = - 1 A
V DD = - 6 V, R L = 6 ?
1.7
2.5
16
32
25
50
nC
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
t d(off)
t f
t rr
I D ? - 1 A, V GEN = - 4.5 V, R g = 6 ?
I F = - 1 A, dI/dt = 100 A/μs
120
80
46
180
120
70
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
8
6
4
2
0
V GS = 5 thru 2 V
1.5 V
10
8
6
4
2
0
T C = 125 °C
25 °C
- 55 °C
0
2
4
6
8
10
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
www.vishay.com
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For technical questions, contact: pmostechsupport@vishay.com
Document Number: 71814
S13-1847-Rev. F, 19-Aug-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
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