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| 型号： | SI8405DB-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 5/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 3.6A 2X2 4-MFP |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 55 毫欧 @ 1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 950mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 4.5V |
| 功率 - 最大： | 1.47W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 4-XFBGA，CSPBGA |
| 供应商设备封装： | 4-Microfoot |
| 包装： | 带卷 (TR) |
Si8405DB
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT: 4-BUMP (0.8 mm PITCH)
4
0.30
0.31
Note 3
e
Solder Mask
0.40
A 2
Silicon
A
A 1
Bump Note 2
b Diamerter
e
Recommended Land
8401
XXX
Mark on Backside of Die
Notes (unless otherwise specified):
1. Laser mark on the silicon die back, coated with a thin metal.
2. Bumps are 95.5/3.8/0.7 Sn/Ag/Cu.
3. Non-solder mask defined copper landing pad.
4. The flat side of wafers is oriented at the bottom.
E
e
D
S
S
e
Dim.
A
A 1
A 2
b
D
E
Min.
0.600
0.260
0.340
0.370
1.520
1.520
Millimeters a
Max.
0.650
0.290
0.360
0.410
1.600
1.600
Min.
0.0236
0.0102
0.0134
0.0146
0.0598
0.0598
Inches
Max.
0.0256
0.0114
0.0142
0.0161
0.0630
0.0630
e
0.800
0.0315
S
0.360
0.400
0.0142
0.0157
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71814 .
Document Number: 71814
S13-1847-Rev. F, 19-Aug-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
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| SI-8405L | 制造商:SANKEN 制造商全称:Sanken electric 功能描述:Separate Excitation Switching Type with Coil |
| SI-8405NH | 制造商:ALLEGRO 制造商全称:Allegro MicroSystems 功能描述:Surface-Mount, Synchronous Rectifier Step-down Switching Mode Regulator Control ICs |
| SI-8405NL | 制造商:SANKEN 制造商全称:Sanken electric 功能描述:Surface-Mount Synchronous Rectifier Step-down Switching Mode Regulator Control ICs |
| SI8406DB | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20 V (D-S) MOSFET |
| SI8406DB-T2-E1 | 功能描述:MOSFET 20V 16A 13W 33mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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