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参数资料
| 型号： | SI7997DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 8-SOIC |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 60A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.5 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 160nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6200pF @ 15V |
| 功率 - 最大： | 46W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 双 |
| 供应商设备封装： | PowerPAK? SO-8 Dual |
| 包装： | 标准包装 |
| 其它名称： | SI7997DP-T1-GE3DKR |
New Product
Si7997DP
Vishay Siliconix
Dual P-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( ? )
I D (A) a
Q g (Typ.)
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
- 30
0.0055 at V GS = - 10 V
0.0078 at V GS = - 4.5 V
PowerPAK ? SO-8
- 60
- 60
51 nC
? TrenchFET ? Power MOSFET
? PWM Optimized
? 100 % R g Tested
? 100 % UIS Tested
? Compliant to RoHS Directive 2002/95/EC
6.15 mm
1
S1
2
G1
3
S2
5.15 mm
G2
APPLICATIONS
? Battery and Load Switching
for Notebook PCs
S 1
S 2
4
8
D1
7
D1
6
D2
5
D2
G 1
G 2
Bottom V ie w
D 1
D 2
Orderin g Information: Si7997DP-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
P-Channel MOSFET P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 30
± 20
- 60 a
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
- 60 a
- 20.8 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
- 16.6 b, c
- 100
- 38
- 2.9 b, c
- 30
45
A
mJ
T C = 25 °C
46
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
29
3.5 b, c
W
T A = 70 °C
2.2 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b, f
Maximum Junction-to-Case (Drain)
t ? 10 s
Steady State
R thJA
R thJC
26
2.2
35
2.7
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 85 °C/W.
Document Number: 66719
S10-1826-Rev. A, 09-Aug-10
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7998DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET |
| SI7998DP-T1-GE3 | 功能描述:MOSFET 30V 25/30A 93/53mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI79XX | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator |
| SI79XXA | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator |
| SI-7TNL2.140G-T | 制造商:HITACHIMETAL 功能描述: |
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