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参数资料
| 型号： | SI7923DN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH D-S 30V 1212-8 PPAK |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 47 毫欧 @ 6.4A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 10V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 双 |
| 供应商设备封装： | PowerPAK? 1212-8 Dual |
| 包装： | 标准包装 |
| 其它名称： | SI7923DN-T1-GE3DKR |
Si7923DN
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 30
R DS(on) ( Ω )
0.047 at V GS = - 10 V
0.075 at V GS = - 4.5 V
I D (A)
- 6.4
-5
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? New Low Thermal Resistance PowerPAK ?
Package
APPLICATIONS
PowerPAK 1212-8
? Portable
- Battery Switch
- Load Switch
3.30 mm
1
S1
G1
3.30 mm
S 1
S 2
2
3
S2
4
G2
8
D1
D1
G 1
G 2
7
D2
6
D2
5
Bottom View
Ordering Information: Si7923DN-T1-E3 (Lead (Pb)-free)
D 1
D 2
Si7923DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
- 30
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 85 °C
I D
I DM
- 6.4
- 4.6
- 20
- 4.3
- 3.1
A
Continuous Source Current (Diode Conduction) a
I S
- 2.3
- 1.1
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 85 °C
P D
T J , T stg
2.8
1.5
- 55 to 150
260
1.3
0.85
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
35
75
4
44
94
5
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (w ww.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72622
S-83050-Rev. C, 29-Dec-08
www.vishay.com
1
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相关代理商/技术参数 |
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| SI7924 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator |
| SI7924A | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator |
| SI7925DN-T1-E3 | 功能描述:MOSFET 12V 6.5A 1.3W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7925DN-T1-GE3 | 功能描述:MOSFET 12V 6.5A 2.5W 42mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7938DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 40-V (D-S) MOSFET |
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