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参数资料
| 型号： | SI7913DN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 1212-8 PPAK |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 37 毫欧 @ 7.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 24nC @ 4.5V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 双 |
| 供应商设备封装： | PowerPAK? 1212-8 Dual |
| 包装： | 标准包装 |
| 其它名称： | SI7913DN-T1-GE3DKR |
Si7913DN
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 20
R DS(on) ( Ω )
0.037 at V GS = - 4.5 V
0.048 at V GS = - 2.5 V
0.066 at V GS = - 1.8 V
I D (A)
- 7.4
- 6.5
- 55
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? New Low Thermal Resistance PowerPAK ?
Package
APPLICATIONS
? Portable
PowerPAK 1212-8
- PA Switch
- Battery Switch
3.30 mm
1
S1
G1
3.30 mm
- Load Switch
S 1
S 2
2
3
S2
G2
8
D1
D1
4
G 1
G 2
7
D2
6
5
D2
Bottom View
Ordering Information: Si7913DN-T1-E3 (Lead (Pb)-free)
Si7913DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
D 1
P-Channel MOSFET
D 2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
- 20
±8
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 85 °C
I D
I DM
- 7.4
- 5.3
- 20
- 5.0
- 3.6
A
Continuous Source Current (Diode Conduction) a
I S
- 2.3
- 1.1
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 85 °C
P D
T J , T stg
2.8
1.5
- 55 to 150
260
1.3
0.85
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
35
75
4
44
94
5
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72615
S-83050-Rev. C, 29-Dec-08
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7915 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator |
| SI7915A | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator |
| SI7918 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator |
| SI7918A | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator |
| SI7921DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 30-V (D-S) MOSFET |
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