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参数资料
| 型号： | SI7913DN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 1212-8 PPAK |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 37 毫欧 @ 7.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 24nC @ 4.5V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 双 |
| 供应商设备封装： | PowerPAK? 1212-8 Dual |
| 包装： | 标准包装 |
| 其它名称： | SI7913DN-T1-GE3DKR |
Si7913DN
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = - 250 μA
- 0.40
- 1.0
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 8 V
V DS = - 20 V, V GS = 0 V
V DS = - 20 V, V GS = 0 V, T J = 85 °C
V DS ≤ - 5 V, V GS = - 4.5 V
V GS = - 4.5 V, I D = - 7.4 A
- 20
0.029
± 100
-1
-5
0.037
nA
μA
A
Drain-Source On-State Resistance
a
R DS(on)
V GS = - 2.5 V, I D = - 6.5 A
0.038
0.048
Ω
V GS = - 1.8 V, I D = - 1.5 A
0.051
0.066
Forward Transconductance a
g fs
V DS = - 6 V, I D = - 7.4 A
20
S
Diode Forward Voltage
a
V SD
I S = - 2.3 A, V GS = 0 V
- 0.74
- 1.2
V
Dynamic b
Total Gate Charge
Q g
15.3
24
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q gs
Q gd
R g
t d(on)
t r
V DS = - 10 V, V GS = - 4.5 V, I D = - 7.4 A
f = 1 MHz
V DD = - 10 V, R L = 10 Ω
2.0
3.9
7
20
70
30
110
nC
Ω
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
t d(off)
t f
t rr
I D ? - 1 A, V GEN = - 4.5 V, R g = 6 Ω
I F = - 2.3 A, dI/dt = 100 A/μs
72
150
25
110
225
50
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
16
12
8
V GS = 5 thru 2.5 V
2V
1.5 V
20
16
12
8
T C = 125 °C
4
4
25 °C
0
1V
0
- 55 °C
0
1
2
3
4
0.0
0.5
1.0
1.5
2.0
2.5
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 72615
S-83050-Rev. C, 29-Dec-08
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7915 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator |
| SI7915A | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator |
| SI7918 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator |
| SI7918A | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator |
| SI7921DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 30-V (D-S) MOSFET |
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