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| 型号： | SI7868ADP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 20V PPAK 8SOIC |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 40A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.25 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 1.6V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 150nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6110pF @ 10V |
| 功率 - 最大： | 83W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 带卷 (TR) |
Si7868ADP
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 5 mA
20
23
4
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
0.6
1.6
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 16 V
V DS = 20 V, V GS = 0 V
V DS = 20 V, V GS = 0 V, T J = 55 °C
V DS ≥ 5 V, V GS = 10 V
30
± 100
1
10
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 20 A
V GS = 4.5 V, I D = 20 A
V DS = 15 V, I D = 20 A
0.0018
0.0021
150
0.00225
0.00275
Ω
S
Dynamic
b
Input Capacitance
C iss
6110
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 10 V, V GS = 0 V, f = 1 MHz
1225
550
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 10 V, V GS = 10 V, I D = 15 A
V DS = 10 V, V GS = 4.5 V, I D = 15 A
98
46
9.5
150
70
nC
Gate-Drain Charge
Q gd
8.8
Gate Resistance
R g
f = 1 MHz
0.5
1.1
1.7
Ω
Turn-On Delay Time
t d(on)
28
45
Rise Time
Turn-Off Delay Time
t r
t d(off)
V DD = 10 V, R L = 1 Ω
I D ? 10 A, V GEN = 4.5 V, R g = 1 Ω
120
52
180
80
Fall Time
Turn-On Delay Time
t f
t d(on)
12
16
20
25
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 10 V, R L = 1 Ω
I D ? 10 A, V GEN = 10 V, R g = 1 Ω
97
58
8
150
90
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
40
70
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 5 A
I F = 20 A, di/dt = 100 A/μs, T J = 25 °C
0.65
50
43
24
26
1.1
75
60
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73384
S-80438-Rev. B, 03-Mar-08
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| SI786CG-E3 | 功能描述:开关变换器、稳压器与控制器 Dual 3.3V Step-Down RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| SI786CG-T1 | 功能描述:开关变换器、稳压器与控制器 Dual 3.3V Step-Down RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
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