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| 型号： | SI7872DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 30V 8-SOIC |
| 标准包装： | 1 |
| 系列： | LITTLE FOOT® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 22 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11nC @ 4.5V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 标准包装 |
| 其它名称： | SI7872DP-T1-GE3DKR |
Si7872DP
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
FEATURES
Channel-1
Channel-2
V DS (V)
30
R DS(on) ( Ω )
0.022 at V GS = 10 V
0.030 at V GS = 4.5 V
0.022 at V GS = 10 V
0.028 at V GS = 4.5 V
I D (A)
10
8
10
8
? Halogen-free Option Available
? LITTLE FOOT ? Plus Schottky
? PWM Optimized
? New Low Thermal Resistance PowerPAK ?
Package with low 1.07 mm Profile
RoHS
COMPLIANT
SCHOTTKY PRODUCT SUMMARY
APPLICATIONS
V DS (V)
30
V SD (V)
Diode Forward Voltage
0.50 V at 1.0 A
I F (A)
3.0
? Asymmetrical Buck-Boost DC/DC Converter
PowerPAK ? SO-8
6.15 mm
1
S1
2
G1
S2
5.15 mm
D 1
D 2
D1
3
4
G2
8
7
D1
D2
G 1
G 2
Schottky Diode
6
5
D2
Bottom View
Ordering Information: Si7872DP-T1-E3 (Lead (Pb)-free)
Si7872DP-T1-GE3 (Lead (Pb)-free and Halogen-f
S 1
N-Channel MOSFET
S 2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
10 s
Steady State
Parameter
Symbol
Channel-1 Channel-2
Channel-1 Channel-2
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
V DS
V GS
I D
I DM
± 20
10
7
± 12
30
30
± 20
6.4
5.1
± 12
V
A
Continuous Source Current (Diode Conduction) a
I S
2.9
1.1
Maximum Power Dissipation a
T A = 25 °C
T A = 70 °C
P D
3.5
2.2
1.4
0.9
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b,c
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
MOSFET
Schottky
Parameter
Symbol
Typical Maximum
Typical Maximum
Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
Steady State
R thJA
26 35
60 85
26 35
60 85
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R thJC
4.1 6.0
4.1 6.0
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72035
S-82116-Rev. C, 08-Sep-08
www.vishay.com
1
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