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| 型号： | SI7872DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 30V 8-SOIC |
| 标准包装： | 1 |
| 系列： | LITTLE FOOT® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 22 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11nC @ 4.5V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 标准包装 |
| 其它名称： | SI7872DP-T1-GE3DKR |
Si7872DP
Vishay Siliconix
MOSFET SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. b
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
Ch-1
Ch-2
1.0
0.8
3.0
2.0
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current b
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 0 V, V GS = ± 12 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 85 °C
V DS = 5 V, V GS = 10 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
20
20
± 100
± 100
1
100
15
2000
nA
μA
A
Drain-Source On-State
Resistance b
R DS(on)
V GS = 10 V, I D = 7.5 A
V GS = 4.5 V, I D = 6.5 A
Ch-1
Ch-2
Ch-1
Ch-2
0.017
0.016
0.024
0.020
0.022
0.022
0.030
0.028
Ω
Forward Transconductance b
g fs
V DS = 15 V, I D = 7.5 A
Ch-1
Ch-2
19
21
S
Diode Forward Voltage b
V SD
I S = 1 A, V GS = 0 V
Ch-1
Ch-2
0.75
0.47
1.2
0.5
V
Dynamic a
Total Gate Charge
Q g
Ch-1
Ch-2
7
11.5
11
18
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q gs
Q gd
R G
t d(on)
t r
V DS = 15 V, V GS = 4.5 V, I D = 7.5 A
V DD = 15 V, R L = 15 Ω
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
2.9
3.8
2.5
3.5
1.5
1.8
9
12
10
10
15
20
17
17
nC
Ω
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery
Time
t d(off)
t f
t rr
I D ? 1 A, V GEN = 10 V, R G = 6 Ω
I F = 1.7 A, dI/dt = 100 A/μs
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
19
40
9
9
35
28
30
66
15
15
55
45
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V F
Test Conditions
I F = 1.0 A
I F = 1.0 A, T J = 125 °C
Min.
Typ.
0.47
0.36
Max.
0.50
0.42
Unit
V
V r = 30 V
0.004
0.100
Maximum Reverse Leakage Current
I rm
V r = 30 V, T J = 100 °C
0.7
10
mA
V r = – 30 V, T J = 125 °C
3.0
20
Junction Capacitance
C T
V r = 10 V
50
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72035
S-82116-Rev. C, 08-Sep-08
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