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| 型号： | SI7846DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 150V PPAK 8SOIC |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 50 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 36nC @ 10V |
| 功率 - 最大： | 1.9W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 带卷 (TR) |
Si7846DP
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
150
R DS(on) ( Ω )
0.050 at V GS = 10 V
I D (A)
6.7
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFETS
? New Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
? PWM Optimized for Fast Switching
? 100 % R g Tested
PowerPAK SO-8
APPLICATIONS
? Primary Side Switch for High Density DC/DC
6.15 mm
1
S
S
5.15 mm
? Telecom/Server 48 V DC/DC
? Industrial and 42 V Automotive
2
S
3
4
G
D
D
8
7
D
D
6
5
D
G
Bottom View
S
Ordering Information: Si7846DP-T1-E3 (Lead (Pb)-free)
Si7846DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
150
± 20
Unit
V
T C = 25 °C
24.5
Continuous Drain Current (T J = 150 °C) a
T C = 70 °C
T A = 25 °C
T A = 70 °C
I D
6.7
5.4
19.5
4.0
3.3
A
Pulsed Drain Current
I DM
50
Avalanche Current
L = 0.1 mH
I AS
25
Continuous Source Current (Diode Conduction)
a
I S
4.3
1.6
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 70 °C
P D
T J , T stg
5.2
3.3
- 55 to 150
260
1.9
1.2
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
Steady State
R thJA
19
52
24
65
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R thJC
1.5
1.8
Notes
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71442
S09-0537-Rev. F, 06-Apr-09
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7848BDP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET |
| SI7848BDP-T1-E3 | 功能描述:MOSFET 40V 47A 36W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7848BDP-T1-GE3 | 功能描述:MOSFET 40V 47A 36W 9.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7848BDP-T1-GE3 | 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET 40V 47A SOIC |
| SI7848DP | 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8 |
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