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参数资料
| 型号： | SI8220BB-A-ISR |
| 厂商： | Silicon Laboratories Inc |
| 文件页数： | 16/32页 |
| 文件大小： | 0K |
| 描述： | IC ISODRIVER 2.5A OPTO INP 8SOIC |
| 标准包装： | 2,500 |
| 输入 - 1 侧/2 侧： | 1/0 |
| 通道数： | 1 |
| 电源电压： | 6.5 V ~ 24 V |
| 电压 - 隔离： | 2500Vrms |
| 传输延迟： | 40ns |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 工作温度： | -40°C ~ 125°C |
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P D = ? V F ? ? I F ? ? Duty Cycle ? + ? V DD ? ? I QOUT ? + ? C int ? ? V DD ? ? F ? + ? C L ? ? V DD ? ? F ?
P Dmax ? ---------------------------
Si8220/21
6. Applications
6.1. Power Supply Connections
V SS can be biased at, above, or below ground as long as the voltage on V DD with respect to V SS is a maximum of
24 V. V DD decoupling capacitors should be placed as close to the package pins as possible. The optimum values
for these capacitors depend on load current and the distance between the chip and its power source. It is
recommended that 0.1 and 10 μF bypass capacitors be used to reduce high-frequency noise and maximize
performance.
6.2. Layout Considerations
It is most important to minimize ringing in the drive path and noise on the V DD lines. Care must be taken to
minimize parasitic inductance in these paths by locating the Si8220/21 as close to the device it is driving as
possible. In addition, the V DD supply and ground trace paths must be kept short. For this reason, the use of power
and ground planes is highly recommended. A split ground plane system having separate ground and V DD planes
for power devices and small signal components provides the best overall noise performance.
6.3. Power Dissipation Considerations
Proper system design must assure that the Si8220/21 operates within safe thermal limits across the entire load
range. The Si8220/21 total power dissipation is the sum of the power dissipated by bias supply current, internal
switching losses, and power delivered to the load, as shown in Equation 1.
2 2
where:
P D is the total Si8220 device power dissipation (W)
I F is the diode current (20 mA max)
V F is the diode anode voltage (2.8 V max)
I QOUT is the driver maximum bias curent (5 mA)
C int is the internal parasitic capacitance (370 pF)
V DD is the driver-side supply voltage (24 V max)
F is the switching frequency (Hz)
Equation 1.
The maximum allowable power dissipation for the Si8220/21 is a function of the package thermal resistance,
ambient temperature, and maximum allowable junction temperature, as shown in Equation 2.
T jmax – T A
? ja
where:
P Dmax is the maximum allowable Si8220/21 power dissipation (W)
T jmax is the Si8220/21 maximum junction temperature (150 °C)
T A is the ambient temperature (°C)
? ja is the Si8220/21 package junction-to-air thermal resistance (125 °C/W)
Equation 2.
Substituting values for P Dmax T jmax , T A , and ? ja into Equation 2 results in a maximum allowable total power
dissipation of 1.0 W. The maximum allowable load is found by substituting this limit and the appropriate datasheet
values from Table 1 on page 4 into Equation 1 and simplifying. The result is Equation 3, where V F = 2.8 V,
I F = 10 mA, and V DD = 18 V.
16
Rev. 1.4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI8220BB-D-IS | 制造商:Silicon Laboratories Inc 功能描述:2.5KV 2.5A OPTO INPUT ISODRIVER, 8V UVLO (HCPL3120 REPLACEME - Rail/Tube |
| Si8220BD-A-IS | 功能描述:隔离器接口集成电路 5.0kV 2.5A Opto Input ISOdriver RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube |
| SI8220BD-A-ISR | 功能描述:IC ISODRIVER 2.5A OPTO IN 16SOIC RoHS:是 类别:隔离器 >> 数字隔离器 系列:- 产品培训模块:IsoLoop® Isolator 标准包装:50 系列:IsoLoop® 输入 - 1 侧/2 侧:5/0 通道数:5 电源电压:3 V ~ 5.5 V 电压 - 隔离:2500Vrms 数据速率:110Mbps 传输延迟:12ns 输出类型:CMOS 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:管件 工作温度:-40°C ~ 85°C 其它名称:390-1053-5 |
| Si8220-B-IP | 功能描述:隔离器接口集成电路 2.5A Single ISOdriver w/Opto In RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube |
| Si8220CB-A-IS | 功能描述:隔离器接口集成电路 2.5kV 2.5A Opto Input ISOdriver RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube |
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