参数资料
型号: SI8220BB-A-ISR
厂商: Silicon Laboratories Inc
文件页数: 9/32页
文件大小: 0K
描述: IC ISODRIVER 2.5A OPTO INP 8SOIC
标准包装: 2,500
输入 - 1 侧/2 侧: 1/0
通道数: 1
电源电压: 6.5 V ~ 24 V
电压 - 隔离: 2500Vrms
传输延迟: 40ns
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
工作温度: -40°C ~ 125°C
Si8220/21
Table 3. Insulation and Safety-Related Specifications
Value
Parameter
Symbol
Test Condition
WB
NB
Unit
SOIC-16
SOIC-8
Nominal Air Gap (Clearance) 1
Nominal External Tracking (Creepage) 1
Minimum Internal Gap (Internal Clearance)
L(IO1)
L(IO2)
8.0 min
8.0 min
0.014
4.9 min
4.01 min
0.014
mm
mm
mm
Tracking Resistance
(Proof Tracking Index)
Erosion Depth
PTI
ED
IEC60112
600
0.040
600
0.040
V
mm
10
Resistance (Input-Output) 2
R IO
12
10
12
?
Capacitance (Input-Output) 2
Input Capacitance 3
C IO
C I
f = 1 MHz
2.0
4.0
1.0
4.0
pF
pF
Notes:
1. The values in this table correspond to the nominal creepage and clearance values as detailed in "12.Package Outline:
16-Pin Wide Body SOIC" on page 25, "10.Package Outline: 8-Pin Narrow Body SOIC" on page 23. VDE certifies the
clearance and creepage limits as 8.5 mm minimum for the WB SOIC-16 package and 4.7 mm minimum for the NB
SOIC-8 package. UL does not impose a clearance and creepage minimum for component level certifications. CSA
certifies the clearance and creepage limits as 3.9 mm minimum for the NB SOIC-8 and 7.6 mm minimum for the WB
SOIC-16 package.
2. To determine resistance and capacitance, the Si822x is converted into a 2-terminal device. Pins 1–8 (1–4, NB SOIC-8)
are shorted together to form the first terminal and pins 9–16 (5–8, NB SOIC-8) are shorted together to form the second
terminal. The parameters are then measured between these two terminals.
3. Measured from input pin to ground.
Rev. 1.4
9
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