参数资料
型号: SI8250-IM
厂商: SILICON LABORATORIES
元件分类: 微控制器/微处理器
英文描述: DIGITAL POWER CONTROLLER
中文描述: SPECIALTY MICROPROCESSOR CIRCUIT, QCC28
封装: 5 X 5 MM, ROHS COMPLIANT, QFN-28
文件页数: 21/30页
文件大小: 932K
代理商: SI8250-IM
Si8250/1/2
Preliminary Rev. 0.8
21
6. Layout Considerations
The mixed-signal nature of the Si8250/1/2 mandates clean bias supplies and ground returns. It is best to provide
separate ground planes for analog, digital and power switch returns. These planes should tie together at only one
point to eliminate the possibility of circulating ground currents.
For best performance, the VDD supply should be decoupled from the main supply. The LQFP-32 package provides
the best noise performance because it has separate analog and digital VDD and ground inputs (AVDD, AGND). As
shown in Figure 9, the AVDD is decoupled by a filter consisting of a 1
resistor in series with a 500 mA, 40
ferrite bead and a parallel combination of a 10 uF with a 0.1 uF high-frequency bypass capacitor. All connections
should be kept as short as possible. The VDDA and GNDA should be connected into their respective ground
planes. The QFN-28 package shares analog and digital power with ground on the same pins. Power supply
decoupling is shown in Figure 10. Again, all connections should be kept as short as possible.
Figure 9. Power Supply Connections for LQFP-32 Package
Figure 10. Power Supply Connections for QFN-28 Package
AVDD
DVDD
Ferrite bead
500 mA, 40
0.1 uF
10 uF
Si8250/1/2
AGND
DGND
AGND
10 uF
0.1 uF
2.5 V
1
Keep trace
lengths as short
as possible
VDD
Ferrite bead
500 mA, 40
0.1 uF
10 uF
Si8250/1/2
GND
2.5 V
1
Keep trace
lengths as short
as possible
相关PDF资料
PDF描述
SI8250-IQ DIGITAL POWER CONTROLLER
SI8401DB-T1 P-Channel 20-V (D-S) MOSFET, Low-Threshold
SI8401DB-T1-E3 P-Channel 20-V (D-S) MOSFET, Low-Threshold
SI8401DB Single P-Channel MOSFET;
SI8402DB 20-V N-Channel 1.8-V (G-S) MOSFET
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