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参数资料
| 型号： | SI8401DB |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | Single P-Channel MOSFET; |
| 中文描述： | 单P沟道MOSFET |
| 文件页数： | 1/5页 |
| 文件大小： | 83K |
| 代理商： | SI8401DB |
FEATURES
TrenchFET Power MOSFET
New MICRO FOOT Chipscale Packaging
Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area
Pin Compatible to Industry Standard Si3443DV
APPLICATIONS
PA, Battery and Load Switch
Battery Charger Switch
PA Switch
Si8401DB
Vishay Siliconix
Document Number: 71674
S-40384—Rev. F, 01-Mar-04
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
20
0.065 @ V
GS
=
4.5 V
4.9
0.095 @ V
GS
=
2.5 V
4.1
MICRO FOOT
S
G
D
P-Channel MOSFET
3
2
4
1
S
D
D
G
Bump Side View
Backside View
Device Marking: 8401
xxx = Date/Lot Traceability Code
8401
xxx
Ordering Information:
Si8401DB-T1
Si8401DB-T1—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
4.9
3.6
T
A
= 70 C
3.9
2.8
A
Pulsed Drain Current
I
DM
10
continuous Source Current (Diode Conduction)
a
I
S
2.5
2.5
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.77
1.47
W
T
A
= 70 C
1.77
0.94
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Package Reflow Conditions
b
VPR
215/245
c
C
IR/Convection
220/250
c
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
35
45
Steady State
72
85
C/W
Maximum Junction-to-Foot (drain)
Steady State
R
thJF
16
20
Notes
a.
b.
c.
Surface Mounted on 1” x 1” FR4 Board.
Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
Package reflow conditions for lead-free.
相关PDF资料 |
PDF描述 |
|---|---|
| SI8402DB | 20-V N-Channel 1.8-V (G-S) MOSFET |
| SI8402DB-T1 | 20-V N-Channel 1.8-V (G-S) MOSFET |
| SI8417DB | P-Channel 1.8-V (G-S) MOSFET |
| SI8440 | QUAD-CHANNEL DIGITAL ISOLATOR |
| SI8440-A-IS | QUAD-CHANNEL DIGITAL ISOLATOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI8401DB-T1 | 功能描述:MOSFET 20V 4.9A 1.47W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI8401DB-T1-E1 | 功能描述:MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI8401DB-T1-E3 | 功能描述:MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI8401DB-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI-8401L | 制造商:Sanken Electric Co Ltd 功能描述:Switching Mode Regulator 4-Pin 制造商:Sanken Electric Co Ltd 功能描述:IC REG BUCK 5V 0.5A EI-12.5 |
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