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参数资料
| 型号： | SI8402DB-T1 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | 20-V N-Channel 1.8-V (G-S) MOSFET |
| 中文描述： | 20 - V N -通道的1.8 V（GS）的MOSFET的 |
| 文件页数： | 1/6页 |
| 文件大小： | 91K |
| 代理商： | SI8402DB-T1 |
FEATURES
TrenchFET Power MOSFET
New MICRO FOOT Chipscale Packaging
Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area
APPLICATIONS
PA, Battery and Load Switch for Portable Devices
Si8402DB
Vishay Siliconix
New Product
Document Number: 72657
S-32557—Rev. A, 15-Dec-03
www.vishay.com
1
20-V N-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.037 @ V
GS
= 4.5 V
7.3
20
0.039 @ V
GS
= 2.5 V
7.1
0.043 @ V
GS
= 1.8 V
6.8
MICRO FOOT
3
2
4
1
S
D
D
G
Bump Side View
Backside View
Device Marking: 8402
xxx = Date/Lot Traceability Code
8402
xxx
G
S
D
N-Channel MOSFET
Ordering Information: Si8402DB-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
7.3
5.3
T
A
= 70 C
5.9
4.3
A
Pulsed Drain Current
I
DM
30
continuous Source Current (Diode Conduction)
a
I
S
2.3
1.2
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.77
1.47
W
T
A
= 70 C
1.77
0.94
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
Package Reflow Conditions
b
VPR
215
C
IR/Convection
220
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
35
45
Steady State
72
85
C/W
Maximum Junction-to-Foot (drain)
Steady State
R
thJF
16
20
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI8402DB-T1-E1 | 功能描述:MOSFET 20V 6.8A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI8402DB-T1-E3 | 制造商:Vishay Semiconductors 功能描述: |
| SI-8402L | 制造商:SANKEN 制造商全称:Sanken electric 功能描述:Separate Excitation Switching Type with Coil |
| SI-8403L | 制造商:SANKEN 制造商全称:Sanken electric 功能描述:Separate Excitation Switching Type with Coil |
| SI8404DB-T1-E1 | 功能描述:MOSFET 8.0V 12.2A 6.25W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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