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参数资料
| 型号： | SI8402DB-T1 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | 20-V N-Channel 1.8-V (G-S) MOSFET |
| 中文描述： | 20 - V N -通道的1.8 V（GS）的MOSFET的 |
| 文件页数： | 2/6页 |
| 文件大小： | 91K |
| 代理商： | SI8402DB-T1 |
Si8402DB
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72657
S-32557—Rev. A, 15-Dec-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.4
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
A
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70 C
5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 4.5 V
5
A
V
GS
= 4.5 V, I
D
= 1 A
0.031
0.037
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 1 A
0.033
0.039
V
GS
= 1.8 V, I
D
= 1 A
0.035
0.043
Forward Transconductance
a
g
fs
V
DS
= 10
V, I
D
= 1 A
12
S
Diode Forward Voltage
a
V
SD
I
S
= 1 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
17
26
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 1 A
2
nC
Gate-Drain Charge
Q
gd
3.1
Gate Resistance
R
g
f = 1 MHz
15
Turn-On Delay Time
t
d(on)
30
45
Rise Time
t
r
V
DD
= 10 V, R
L
= 10
1 A, V
GEN
= 4.5 V, R
g
= 6
45
70
Turn-Off Delay Time
t
d(off)
I
D
145
220
ns
Fall Time
t
f
75
115
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1 A, di/dt = 100 A/ s
30
60
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
0.00
5
10
15
20
25
30
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0
5
10
15
20
25
30
0
1
2
3
4
5
V
GS
= 5 thru 2 V
25 C
T
C
= 125 C
55 C
1.5 V
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
1 V
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