参数资料
型号: SI8402DB-T1
厂商: Vishay Intertechnology,Inc.
英文描述: 20-V N-Channel 1.8-V (G-S) MOSFET
中文描述: 20 - V N -通道的1.8 V(GS)的MOSFET的
文件页数: 6/6页
文件大小: 91K
代理商: SI8402DB-T1
Si8402DB
Vishay Siliconix
New Product
www.vishay.com
6
Document Number: 72657
S-32557—Rev. A, 15-Dec-03
PACKAGE OUTLINE
MICRO FOOT: 4-BUMP (2 X 2, 0.8-mm PITCH)
NOTES (Unless Otherwise Specified):
5.
6.
7.
8.
Laser mark on the silicon die back, coated with a thin metal.
Bumps are Eutectic solder 63/57 Sn/Pb.
Non-solder mask defined copper landing pad.
The flat side of wafers is oriented at the bottom.
Bump Note 2
8402
XXX
Recommended Land
Mark on Backside of Die
Silicon
4
Note 3
Solder Mask
0.30
0.31
0.40
b Diamerter
e
e
A
A
2
A
1
e
S
D
e
S
E
MILLIMETERS*
INCHES
Dim
Min
Max
Min
Max
A
A
1
A
2
b
D
E
e
S
0.600
0.650
0.0236
0.0256
0.260
0.290
0.0102
0.0114
0.340
0.360
0.0134
0.0142
0.370
0.410
0.0146
0.0161
1.520
1.600
0.0598
0.0630
1.520
1.600
0.0598
0.0630
0.750
0.850
0.0295
0.0335
0.370
0.380
0.0146
0.0150
* Use millimeters as the primary measurement.
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